9-14-2013

2013 INTERNATIONAL IMAGE SENSOR WORKSHOP

Snowbird Resort, Utah, USA

June 12-16, 2013

PROGRAM

Wednesday June 12, 2013

17:30-20:30 pm

Reception

Thursday, June 13, 2013

7:00 - 8:30

Breakfast

8:30 - 8:45

Welcome and Opening

 

Eric R. Fossum, Co-Chair and President, IISS

Boyd Fowler, Co-Chair

 

Session 01

Pixel Technology Overview and Small Pixel Sensors

 

Session chair: Nobukazu Teranishi (University of Hyogo / Shizuoka University)

08:45 – 09:00

Innovative Technology Elements for Large and Small Pixel CIS Devices

1.01

Ray Fontaine, Technology Analysis Group, Chipworks, Inc. Ottawa, Canada.

09:00 – 09:15

Blooming and Antiblooming in 1.1um-Pixel CIS

1.02

Calvin Chao, Kuo-Yu Chou, Charles Liu, Yi-Che Chen, Hon-Yih Tu,

Hsiu-Yu Cheng, Fu-Lung Hsueh, and Shou-Gwo Wuu,

Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan.

09:15 – 09:30

Development of Lensed Color Filter Technology for Higher SNR and Lower

1.03

Crosstalk CMOS Image Sensor

Hong-Ki Kim, Bumsuk Kim, Jung-Saeng Kim, *Jungkuk Park, Yooseung Lee,

Taesub Jung, Kyungho Lee, Heegeun Jung, Chang-Rok Moon, JungChak Ahn,

Goto Hiroshige, Chi-Young Choi and Duckhyung Lee; LSI Product & Technology, System

LSI Division, Samsung Electronics Co., Ltd.; *Color Filter Technology Group, System LSI,

Division, Samsung Electronics Co., Ltd, Yongin-City, Gyeonggi-Do, Korea.

09:30 – 09:45

Architecture and Development of Next Generation Small BSI Pixels

1.04

H. Tian, H. Komori, G. Agranov, J. Bai, J. Hynecek, C. Baron, H-W. Lee,

X. Zhao, W. Gazeley, D. Tekleab, S. Nagaraja, W. Gao, P. Adepu,

V. Rajasekaran, A. Rayankula, U. Boettiger, M. Mooney, B. Vaartstra,

Aptina Imaging, San Jose, CA, USA.

09:45 – 10:10

Break

Session 02

Imaging Process and Specialty Pixels

 

Session co-chairs: Shou-Gwo Wuu (TSMC), Jungchak Ahn (Samsung)

10:10 – 10:25

Fundamental Ion Implantation Technologies for Image Sensor Devices

Revised

2.01

G. Fuse, and M. Sugitani SEN Corporation, Saijo, Japan.

10:25 – 10:40

The Impact of Gate Edge Damage on Pixel Read Noise

2.02

Jhy-Jyi Sze, R.J. Lin, Seiji Takahashi, J.M. Hung, Y.C. Lu, T.H. Tseng, C.C.

Wang, S.F. Ting, and Shou-Gwo Wuu, Taiwan Semiconductor Manufacturing

Company, Taiwan, R.O.C.

10:40 – 10:55

Photolithographic Solutions for Image Sensors with High Pixel Density

2.03

Ryo Sasaki, Yuhei Sumiyoshi, Yasuo Hasegawa and Seiya Miura, Canon Inc.,

Tochigi, Japan.

10:55 – 11:10

Dark Current Reduction in Image Sensors through Metals Gettering:

2.04

A Critical Review of Disruptive Techniques

Venkataramana R. Chavva, Kyu-Ha Shim, and Todd Henry, Applied Materials.–.

Varian semiconductor Equipment, Gloucester, MA, USA.

11:10 – 11:25

The DUV Stability of Superlattice-doped CMOS Detector Arrays

2.05

M. E. Hoenk, A. G. Carver, T. Jones, M. Dickie, P. Cheng, F. Greer, S. Nikzad

(Jet Propulsion Laboratory, California Institute of Technology, CA, USA),

J. Sgro (Alacron, Inc., Nashua, NH, USA), S. Tsur (Applied Materials Inc.,

Process, Diagnostics & Control, Rehovot, Israel).

11:25 – 11:40

High Quantum Efficiency Back Illuminated Photon Counting, Far UV, UV,

2.06

and Visible Detector Arrays and their High Throughput Fabrication

Shouleh Nikzad, M. E. Hoenk, A. Carver, T.J. Jones, F. Greer, E. Hamden, and

T. Goodsall, Jet Propulsion Laboratory, California Institute of Technology, USA.

11:40 – 13:10

Lunch

Session 03

Specialty Pixels and Application Specific Imagers

 

Session chair: Daniel Van Blerkom (Forza Silicon),

13:10 – 13:25

A 240x180 120dB 10mW 12us‐latency Sparse Output Vision Sensor

Slides

3.01

for Mobile Applications

Raphael Berner, Christian Brandli, Minhao Yang, Shih-Chii Liu and

Tobi Delbruck, Inst. of Neuroinformatics, University of Zurich and ETH Zurich,

Zurich, Switzerland.

13:25 – 13:40

Two-color Indirect X-ray Photon Counting Image Sensor

3.02

Bart Dierickx, Stijn Vandewiele, Benoit Dupont, Arnaud Defernez, Nick

Witvrouwen, Dirk Uwaerts, Caeleste, Antwerp, Belgium.

13:40 – 13:55

Fully Organic Integrated Arrays on Flexible Substrates for X-Ray Imaging

Slides

3.03

Pawel E. Malinowski1, Abhishek Kumar2, Date J.D. Moet2, David Cheyns1,

Barry P. Rand1, Jan-Laurens P.J. van der Steen2, Kris Myny1, Soeren Steudel1,

Matthias Simon3, Gerwin Gelinck2, and Paul Heremans1,2; 1IMEC, Leuven, Belgium;

2Holst Centre, Eindhoven, The Netherlands, 3Philips Research, Eindhoven,

The Netherlands.

13:55 – 14:10

MEM-FLIM, a CCD Imager for Fluorescence Lifetime Imaging Microscopy

3.04

Jan Bosiers, Harry van Kuijk, Wilco Klaassens, René Leenen, Willem Hoekstra,

Walter de Laat, Agnes Kleimann, Inge Peters, Jan Nooijen, Qiaole Zhao1,

Ian Ted, Young1, Sander de Jong2, Kees Jalink3, Teledyne DALSA Professional

Imaging, The Netherlands, 1Delft University of Technology, Delft, NL; 2Lambert

Instruments, Roden, NL; 3Netherlands Cancer institute, Amsterdam, NL.

14:10 – 14:25

A Direct-Detection X-Ray Cmos Image Sensor with 500 μm Thick High

3.05

Resistivity Silicon

T. Hatsui1,2, M. Omodani2, T. Kudo1, K. Kobayashi1,2, T. Imamura3T. Ohmoto3,

A. Iwata3S. Ono1Y. Kirihara1T. Kameshima2, H. Kasai4, N. Miura4,

N. Kuriyama4, M. Okihara5, Y. Nagatomo5, M. Nagasaki6, T. Watanabe7,

Makina Yabashi1,2 , 1RIKEN Spring-8 Center, 2JASRI, 3A-R-Tec Corp.,

 4LAPIS Semiconductor Miyagi Co., Ltd., 5LAPIS Semiconductor Co., Ltd.,

 6ARKUS Inc, 7University of Hyogo, Japan.

14:25 – 14:40

A FSI CMOS Image Sensor with 200-1000 nm Spectral Response and

3.06

High Robustness to Ultraviolet Light Exposure

Rihito Kuroda, Shun Kawada, Satoshi Nasuno, Taiki Nakazawa, Yasumasa Koda,

Katsuhiko Hanzawa and Shigetoshi Sugawa, Graduate School of Engineering,

Tohoku University, Miyagi, Japan.

14:40 – 15:05

Break

Session 04

Noise.

 

Session chair: Tetsuo Nomoto (SONY)

15:05 – 15:20

Read Noise Distribution Modeling for CMOS Image Sensors

4.01

Boyd Fowler, Dan McGrath, and Peter Bartkovjak, BAE Systems Imaging

Solutions, Milpitas, CA 95035 USA.

15:20 – 15:35

Novel Device with Ultra Low Noise for Smaller CMOS Image Sensor Pixel

4.02

T.H. Hsu, Shou-Gwo Wuu, D.N. Yaung, J.C. Liu, H.H. Tseng, W.D. Wang,

W.C. Hsu, W.I. Hsu, T.J. Wang, Y.L. Tu, C.S. Tsai, W.P. Mo, C.E. Chen

Taiwan Semiconductor Manufacturing Company, Tainan, Taiwan, R.O.C.

15:35 – 15:50

New Model of Dark Fixed Pattern Noise Generation in CMOS Imager

4.03

Pixel with Negative Transfer-Gate Bias Operation

H. Sasaki, Y. Higashi, H. Yamashita, T. Yoshida, N. Momo, T. Ohguro,

H. S. Momose, and Y. Toyoshima, Toshiba Corporation, Yokohama, Japan.

15:50 – 16:05

Emission Microscopy analysis of hot cluster defects of imagers processed on SOI

4.04

G. Meynants, W. Diels, J. Bogaerts, W. Ogiers, CMOSIS, Antwerp, Belgium.

16:05 – 16:30

Break

Session 05

Poster Flash Presentations 

16:30 – 17:30

Session chair: Bart Dierickx (Caeleste)

5.01

Feed-Forward Voltage in CMOS Pinned Photodiodes

Mukul Sarkar (Indian Institute of Technology Delhi), Bernhard Büttgeny

(Mesa Imaging), and Albert J.P. Theuwissen (University of Technology

Delft/Harvest Imaging).

5.02

1280x1024 Logarithmic Snapshot Image Sensor with Photodiode in

Solar Cell mode

Yang Ni, New Imaging Technologies SA, France.

5.03

New Monolithic CMOS Sensors on a Fully Isolated Substrate

Abderrezak Mekkaoui, Dario Gnani, Maurice Garcia-Sciveres, Lawrence Berkeley

National Laboratory, Berkeley, CA, USA.

5.04

Logarithmic Image Sensor for Wide Dynamic Range Stereo Vision System

Christian Bouvier,

Yang Ni, New Imaging Technologies SA, France.

5.05

Segmented-base CMOS Image Sensor for Machine Vision Application

Tomohiro Yamazaki, Toshinori Otaka and Takayuki Hamamoto

Tokyo University of Science, Tokyo, Japan.

5.06

1.1um Back-Side Illuminated Image Sensor Performance Improvement

Chi Han_Lin 1(a), Chih-Kung Chang 1, Yu-Kun Hsiao1, Yueh-Ching Cheng1

Chih-Cherng Jeng2, Kuo-Cheng Lee2, Chun-Hao Chou2, Yi-Yi Cheng2,

Yen-Hsung Ho2, Yin-Chieh Huang2, Chin-Chuan Hsieh1;

 1VisEra Technologies Company, Hsinchu Science Park, Taiwan; 2: Taiwan

Semiconductor Manufacturing Company, Hsinchu Science Park, Taiwan.

5.07

CF/ML Shift Optimization for Small Pixel CMOS Image Sensor through

FDTD Simulation

Wu-Cheng Kuo1, Wei-Chieh Chiang2, Ren-Jie Lin2, Yu-Kun Hsiao1, Jen-Cheng Liu2,

Tsung-Hao Lin1, Hui-Min Yang1, D.N. Yaung2, and Shou-Gwo Wuu2, Chin-Chuan Hsieh1

1VisEra Technologies Company, Hsinchu Science Park, Taiwan

2Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park, Taiwan.

5.08

The Image Quality Standard based on Human Visual System for the Spectral

Sensitivity Crosstalk Depending on Lens F-number

Kazuyuki Matsushima, Masaaki Sato, Shinichiro Saito, Sony Corporation,

Tokyo, Japan.

5.09

Application Demonstration Of Polarization-Analyzing CMOS Image Sensor

and Performance Improvement Using 65 nm Standard CMOS Process

Takashi TOKUDA, Norimitsu WAKAMA, Toshihiko NODA, Kiyotaka SASAGAWA,

Kiyomi KAKIUCHI, and Jun OHTA, Graduate School of Materials Science, Nara

Institute of Science and Technology, Nara, Japan.

5.10

Image Sensor Performance from a Security Camera Perspective

Anders Johannesson and Henrik Eliasson, Axis Communications AB, Lund, Sweden.

5.11

A Passive Integrator to Achieve Low Power, Low Noise Signal Amplification

Yannick De Wit, ON-Semiconductor, Mechelen, Belgium.

5.12

BSI Low Light Level CMOS Image Sensor Employing P-type Pixel

John Tower, James Janesick, Thomas Senko, Peter Levine, Mark Grygon, James Andrews,

Judy Zhu, Thomas Vogelsong, SRI International, Princeton, NJ, USA

Guang Yang, Steven Huang, Chao Sun, Barmak Mansoorian, Forza Silicon Corporation,

Pasadena, CA, USA.

5.13

A Low Power Counting Method in Ramp ADCs used in CMOS Image Sensors

Cheng Ma, Xinyang Wang, ChangChun Institute of Optics, Fine Mechanics and Physics,

Chinese Academy of Science, Changchum, China.

5.14

Single Slope ADC with On-chip Accelerated Continuous-time Differential Ramp

Generator for Low Noise Column-Parallel CMOS Image Sensor

Dexue Zhang, Rami Yassine, Loc Truong, Jeff Rysinski, Daniel Van Blerkom and

Barmak Mansoorian, Forza Silicon Corporation, Pasadena, CA, USA.

5.15

Division-of-Focal-Plane Spectral-Polarization Imaging Sensor

Viktor Gruev, Meenal Kulkarni, Department of Computer Science and Engineering,

Washington University in Saint Louis, Saint Louis, MO, USA.

5.16

Simple Technique to Reduce FPN in a Linear-Logarithm APS

Carlos A. de Moraes Cruz(*)(**), Davies W. de Lima Monteiro(***), Gilles Sicard(****)

 and Alexandre K. P. Souza(*), (*)Department of Electronics and Computation,

Universidade Federal do Amazonas, Manaus, AM, Brazil; (**)Graduate Program in

Electrical Engineering - Federal University of Minas Gerais, Belo Horizonte, MG,

Brazil;(***)Department of Electrical Engineering, DEE/PPGEE, Universidade

Federal de Minas Gerais, Belo Horizonte, MG, Brazil; (****)TIMA Laboratory,

CNRS, Grenoble INP, Grenoble, France.

5.17

Reduction of Motion Blur in CMOS Linear Arrays and TDI Imagers

Benoit Dupont, Bart Dierickx, Caeleste, Antwerp, Belgium.

5.18

Column-Parallel Architecture for Line-of-Sight Detection Image Sensor based

Revised

 on Centroid Calculation

Hayato Kawakami, Satori Igarashi, Yuta Sasada, Junichi Akita, School of Electrical and

Comp. Eng., Kanazawa University, Kanazawa, Ishikawa, Japan.

5.19

Image Lag Analysis and Photodiode Shape Optimization of 4T CMOS Pixels

Revised

Yang Xu1, Albert J.P. Theuwissen1, 2; 1: Delft University of Technology, Delft,

the Netherlands; 2: Harvest Imaging, Bree, Belgium.

5.20

A Radiation Tolerant 4T pixel for Space Applications: Layout and

Process Optimization

Manuel Innocent, ON Semiconductor, Mechelen, Belgium.

Friday, June 14, 2013

7:00 - 8:30

Breakfast

Session 06

Avalanche Photo Diode and Photon Counting

 

Session chair: Lindsay Grant (ST Microelectronics)

8:30 – 8:45

CMOS Image Sensors Based on Linear Mode APDs: Analysis and

6.01

Future Perspectives

Lucio Pancheri a, Olga Shcherbakova a,b, Nicola Massarib, Gian-Franco Dalla Bettaa

and David Stoppab, a: University of Trento, Trento, Italy;  b: Fondazione Bruno Kessler,

Trento, Italy.

8:45 – 9:00

Two-Dimensional Mapping of Photon Counts in Low-Noise

Revised

6.02

Single-Photon Avalanche Diodes

Jau-Yang Wu, Shu-Cheng Li, Fang-Ze Hsu, and Sheng-Di Lin, Department of

Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan.

9:00 – 9:15

9.8μm SPAD-based Analogue Single Photon Counting Pixel with Bias

Slides

6.03

Controlled Sensitivity

Neale A.W. Dutton 1, 2, Lindsay A. Grant1, Robert K. Henderson2

1ST Microelectronics Imaging Division, Pinkhill, Edinburgh, UK,

2The University of Edinburgh, Edinburgh, UK.

9:15 – 9:30

Stabilizing Sensitivity in Large Single-Photon Image Sensors with an

6.04

Integrated 3.3-to-25V All-Digital Charge Pump

Shingo Mandaiy and Edoardo Charbon, Delft University of Technology, Delft,

The Netherlands.

9:30 – 9:45

A 92k SPAD Time-Resolved Sensor in 0.13μm CIS Technology for

Slides

6.05

PET/MRI Applications

Richard J. Walker1, Leo H. C. Braga2, Ahmet T. Erdogan1, Leonardo Gasparini2,

 Lindsay A. Grant3, Robert K. Henderson1, Nicola Massari2, Matteo Perenzoni2,

David Stoppa2; 1CMOS Sensors and Systems (CSS) Group, School of Engineering,

The University of Edinburgh, Edinburgh, UK; 2Smart Optical Sensors and Interfaces

(SOI) Group, Fondazione Bruno Kessler (FBK), Trento, Italy; 3Imaging Division,

STMicroelectronics, Edinburgh, UK.

9:45 – 10:00

Monolithic Integration of LEDs and Silicon Photomultipliers in Standard

6.06

CMOS Technology for Consumer Applications

Nupur Lodha, Shingo Mandai, and Edoardo Charbon; Circuits and Systems,

Delft University of Technology, Delft, The Netherlands.

10:00 – 10:15

Silicon Integrated Electrical Micro-Lens for CMOS SPADs based on

6.07

Avalanche Propagation Phenomenon

Chockalingam Veerappan, Student Member IEEE, Yuki Maruyama, Member IEEE,

Edoardo Charbon, Senior Member IEEE.

10:15 – 10:40

Break

Session 07

Poster Flash Presentations II

10:40 – 12:00

Session chair: Johannes Solhusvik (Omnivision)

7.01

Device Simulation with Electromagnetic Field Propagation Models for

Slides

High-Speed Image Sensors and FDA Noise Analysis

Hideki Mutoh, Link Research Corporation, Odawara, Kanagawa, Japan.

7.02

Monolithic Integration of Flexible Spectral Filters with CMOS Image Sensors

 at Wafer Level for Low Cost Hyperspectral Imaging

 Murali Jayapala, Andy Lambrechts, Nicolaas Tack, Bert Geelen, Bart Masschelein,

Philippe Soussan , IMEC,  Leuven, Belgium.

7.03

Prototype TDI Sensors in Embedded CCD in CMOS technology

Alper Ercan1, 2, Luc Haspeslagh1, Koen De Munck1, Kyriaki Minoglou1, Anne Lauwers1,

 Piet De Moor; 1Imec, Heverlee, Belgium; 2ESAT KU Leuven, Heverlee, Belgium.

7.04

A Dual Exposure Method for Wide Dynamic Range Operation of CMOS

Image Sensors

Woon-Il Choi, Hashimoto Masashi1, Masayuki Uno2 and Hi-Deok, Dept. of Electronics

Engi., Chungnam National Univ., Daejeon, Korea;  1: LG Innotek, Ansan, Kyeonggi,

Korea; 2: Linear Cell Design Corp. Ina-shi, Nagano, Japan.

7.05

A Low-Invasive Micro Imaging Device for Measuring Neural Activities

Implanted in the Mouse Deep Brain

Jun Ohta, Chiakra Kitsumoto, Makito Haruta, Yoshinori Sunaga, Toshihiko Noda,

Kiyotaka Sasagawa,Takashi Tokuda, Mayumi Motoyama, and Yasumi Ohta

Graduate School of Materials Science, Nara Institute of Science and Technology,

 Nara, Japan.

7.06

Designing Incremental Sigma-Delta ADCs for Low Thermal Noise in

Revised

Image Sensors

Adi Xhakoni, Georges Gielen, KU Leuven, Dept. Elektrotechniek ESAT-MICAS,

Leuven, Belgium.

7.07

Digital Integration Sensor

Revised

Song Chen, Andrew Ceballos, and Eric R. Fossum, Thayer School of Engineering

Slides

at Dartmouth, Hanover, NH, USA.

7.08

Design of Analog Readout Circuitry with Front-end Multiplexing for

Column Parallel Image Sensors

Steven Huang, David Estrada, Daniel Van Blerkom and Barmak Mansoorian,

Forza Silicon Corporation, Pasadena, CA, USA.

7.09

RF Design Issues and Challenges in a CMOS Image Sensor Process

Loc Truong, Dexue Zhang, Tomer Leitner1 and Barmak Mansoorian, Forza

Silicon Corporation, Pasadena, CA, USA, 1: Tower Semiconductor LTD.

7.1

A 120μW Vision Chip with ROI Detection

Arnaud Verdant, Antoine Dupret, Patrick Villard, Laurent Alacoque (CEA - LETI – MINATEC

 

Campus, Grenoble, France), Hervé Mathias, Flavien Delgehier (IEF, Orsay, France).

7.11

Design of Pixel for High Speed CMOS Image Sensors

Zhongxiang Cao, Yangfan Zhou, Quanliang Li, Qi Qin, Liyuan Liu, and Nanjian Wu

State Key Laboratory of Superlattices and Microstructures, Institute of

Semiconductors, Chinese Academy of Sciences, Beijing, P. R. China.

7.12

A Multi-Channel Digital Silicon Photomultiplier Array for Nuclear Medical

Imaging Systems based on PET-MRI

Shingo Mandaiy and Edoardo Charbon, Delft University of Technology, Delft,

 The Netherlands.

7.13

Real-time Calibration of a 14-Bit Single Slope ADC with 290MHz

On-chip Accelerated Ramp Generator for Column-Parallel Image Sensors

Jonathan Bergey, Sam Bagwell, Jackson Law, Wilson Law, Forza Silicon

Corporation, Pasadena, CA, USA

7.14

A Novel Architecture for the Implementation of a Family of High Speed,

Multi-line CMOS Image Sensors

M. Moser, E. Fox, D. Deering, P. Donegan, M. Sonder, D. Marchesan, D. Verbugt,

 Binqiao Li, Feng-Hua Feng, Shujuan Xie, N. Safavian, R. Ghannoum, H. Mei,

TELEDYNE DALSA Corporation, Waterloo, ON, Canada.

7.15

On The Pixel Level Estimation of Pinning Voltage, Pinned Photodiode

Revised

Capacitance and Transfer Gate Channel Potential

Vincent Goiffon1, Julien Michelot2, Pierre Magnan1, Magali Estribeau1, Olivier

Marcelot1, Paola Cervantes1, Alice Pelamatti1, and Philippe Martin-Gonthier1,

 1ISAE, Université de Toulouse, Toulouse, France; 2Pyxalis, Grenoble, France.

7.16

Novel Auto-Adaptative Integration-Time Technique for CMOS Image Sensor

Hassan Abbass1, Hawraa Amhaz1, David Alleyson2, Gilles Sicard1, 1TIMA

Laboratory (CNRS, Grenoble INP, UJF, 2LPNC Laboratory, Pierre Mendes

France University, Grenoble, France.

7.17

A Broadcast Quality 2.3MP CMOS Image Sensor with Dynamic Range

Extension Mode.

Emanuele Mandelli, Lester Kozlowski, AltaSens Inc, Westlake Village, CA, USA.

7.18

A Fully Depleted Backside Illuminated CMOS Imager with VGA Resolution

Slides

and 15 micron Pixel Pitch

Stefan Lauxtermann, Vikram Vangapally, Sensor Creations Inc. (SCI),

 Camarillo, CA, USA.

7.19

Linear High-Dynamic-Range Bouncing Pixel with Single Sample

Pablo N. A. Belmonte1,2, P.J. French2, Davies W. De Lima Monteiro1, Frank Sill Torres1,

1Department of Electrical Engineering, DEE/PPGEE, Universidade Federal de

Minas Gerais, Belo Horizonte, MG, Brazil; 2Delft University of Technology,

Electronic Instrumentation Laboratory, Delft, The Netherlands.

7.2

Jailbreak Imagers: Transforming a Single-Photon Image Sensor into a True

Random Number Generator.

Samuel Burri1, Damien Stucki2, Yuki Maruyama3, Claudio Bruschini1, Edoardo Charbon3,

 

Francesco Regazzoni3, 1EPFL, School of Engineering, Lausanne, Switzerland;

2ID Quantique, Switzerland; 3Delft University of Technology, Delft, Netherlands.

7.21

Comparison of Two Cameras based on Single Photon Avalanche Diodes

(SPADS) for Fluorescence Lifetime Imaging Application with Picosecond

Resolution

 F. Powolny1, S. Burri1, C. Bruschini1,2, X. Michalet3, F. Regazzoni4 , E. Charbon1,4,

1Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland;

2Centre Hospitalier Universitaire Vaudois (CHUV), Lausanne, Switzerland; 

3University of California, Los Angeles (UCLA), Los Angeles, USA;

4Delft University of Technology, Delft, The Netherlands.

7.22

Radiation-hard Active Pixel Detectors for Tracking of Charged Particles

Based on HV-CMOS Technology

F. Bompard,1 S. Feigl,2 M. Garcia-Sciveres,3 L. Meng,2 D. Muenstermann,4

 P. Pangaud,1 I. Peric,5 and A. Rozanov1, 1CPPM, Aix-Marseille Universite, Marseille,

France; 2CERN, Geneve, Switzerland; 3Lawrence Berkeley National Laboratory,

Berkeley, CA, USA; 4DPNC, Universite de Geneve, Geneve, Switzerland;

5Institute for Computer Science, University of Heidelberg, Mannheim, Germany.

7.23

Digital Calibration Algorithm for 2-Stage Cyclic ADC used in 33-Mpixel

120-fps CMOS Image Sensor

T. Watabe1,4, K. Kitamura2,4, T. Hayashida2, T. Kosugi3, H. Ohtake2, H. Shimamoto2,

S. Kawahito3,4, and N. Egami2; 1NHK Engineering System, Inc., Setagaya-ku, Tokyo,

JAPAN ; 2NHK Science and Technology Research Laboratories;

 3Brookman Technology, Inc.; 4Shizuoka University, Japan.

7.24

An Optical Punch-Through Diode and Gate Biasing 1-T Pixel for Binary

Pixels in Fully Digital CMOS Image Sensors

Hyung-june Yoon1 and Edoardo Charbon1,2; 1EPFL, Lausanne, Switzerland;

2Delft University of Technology, Delft, Netherlands.

7.25

A 5.2Mpixel@250Fps 16Gbps CMOS Image Sensor with Embedded Digital

Processor for Reconfigurability and on-chip Image Correction

Francisco Jiménez-Garrido 1, José Fernández-Pérez 1, Cayetana Utrera 1, José Ma Muñoz 1,

 

 Ma. Dolores Pardo 1, Rafael Domínguez-Castro 1, Fernando Medeiro 1 and Angel

Rodríguez-Vázquez 2,1; 1Universidad de Sevilla, Instituto de Microelectrónica de

Sevilla (IMSE-CNM), Sevilla, Spain; 2Consejo Superior de Investigaciones Científicas

(CSIC), Instituto de Microelectrónica de Sevilla (IMSE-CNM); 3Innovaciones

Microelectrónicas S.L. (ANAFOCUS); Sevilla (Spain).

7.26

Reconfigurable Focal-Plane Hardware for Block-Wise Intra-Frame HDR Imaging

Jorge Fernandez-Berni, Ricardo Carmona-Galan, Angel Rodrıquez-Vazquez,

Institute of Microelectronics of Seville (CSIC - Universidad de Sevilla) Seville, Spain.

12:00 - 13:30

Lunch

13:30 - 17:30

Social Event - Tram Ride to Hidden Peak (11,000 ft)

17:30 – 19:00

Poster viewing and reception

Saturday, June 15, 2013

7:00 - 8:30

Breakfast

Session 08

Invited Presentation, Array Imagers and Large Area Sensors

 

Session co-chairs: Junichi Nakamura (Aptina Imaging),

 

                          Shouleh Nikzad (JPL, California Institute of Technology)

8:45 – 9:05

Invited Presentation: Zooming in to Multi-Aperture Cameras

8.01

Gal Shabtay, Noy Cohen, David Mendlovic and Eran Kali, Corephotonics Ltd, Israel.

9:05-9:20

LASSENA: A 6.7 Megapixel, 3-sides Buttable Wafer-Scale CMOS Sensor

8.02

using a Novel Grid-Addressing architecture

 I Sedgwick, D Das, N Guerrini, B Marsh, R Turchetta, Science and Technology

Facilities Council, Rutherford Appleton Laboratory, UK.

9.20 – 9.35

Requirements, Developments and Challenges for CCD and CMOS Image

8.03

Sensors for Space Applications

P.Garé, N.Nelms, Y.Nowicki-Bringuier, D.Martin, R.Meynart, M.Zahir,

European Space Agency, Noordwijk, The Netherlands.

9:35 – 9:50

Fabrication of Large Format, Fully Depleted CCDs for the Dark Energy

Revised

8.04

Survey Camera

S.E. Holland1, C.J. Bebek1, K.S. Dawson4, H.T. Diehl3, F. Dion2, J.H. Emes1,

 J. Estrada3, R. Frost2, R. Groulx2, A. Karcher1, W.F. Kolbe1, D. Kubik3 ,

N.P. Palaio1, C.H. Tran1, G. Wang1, and N.A. Roe1; 1Lawrence Berkeley National

Laboratory, Berkeley, CA, USA; 2Teledyne DALSA Semiconductor, Bromont,

Québec, Canada; 3Fermi National Accelerator Laboratory, Batavia, IL, USA;

4University of Utah, Salt Lake City, UT, USA.

9:50 – 10:05

A 12MP 16-Focal Plane CMOS Image Sensor with 1.75mm Pixel:

8:05

Architecture and Implementation

Kwang-Bo Cho1, Nick Tu1, John Brummer1, Khandaker Azad1, Leo Hsu1, Vivian Wang1,

 Dongsoo Kim1, Krishna Palle1, Tien-Min Miao1, Yandong Chen1, Canaan Hong1,

Toan Bao1, Vitanshu Sharma1, Yuan Fong1, Kumudini Irkar1, Syed Hashmi1, Vinesh

Sukumar1, Salman Kabir1, Gershon Rosenblum1, Yong Gao1, Kil-Ho Ahn2, Hyuk-Jin Ko2,

 

 Jeff Watson3, Chris Kenoyer3; 1Aptina, LLC, San Jose, CA, USA; 2Aptina Korea Co,

Seoul, Korea; 3Aptina, LLC, Corvallis, OR, USA.

10:05 – 10:30

Break

Session 09

Image Sensor Design

 

Session chair: Alex Krymski (Alexima)

10:30 – 10:45

Application of Photon Statistics to the Quanta Image Sensor

Slides

9.01

Eric R. Fossum, Thayer School of Engineering at Dartmouth, Hanover, NH, USA.

10:45 – 11:00

Early Research Progress on Quanta Image Sensors

Slides

9.02

Saleh Masoodian, Yue Song, Donald Hondongwa, Jiaju Ma, Kofi Odame

and Eric R. Fossum, Thayer School of Engineering at Dartmouth, Hanover, NH, USA.

11:00 – 11:15

Organic CMOS Image Sensor with Thin Panchromatic Organic Photoelectric

9.03

Conversion Layer: Durability and Performance

Mikio Ihama1, Hideyuki Koguchi1, Hiroshi Inomata1, Hideki Asano1,Yuuki Imada1,

Yasuyoshi Mishima1, Yoshihisa Kato2, Yutaka Hirose2,Mizuki Segawa2,

Tetsuya Ueda2, Shinji Kishimura2; 1Frontier Core-Technology Laboratories,

FUJIFILM Corporation, Kanagawa, Japan; 2Industrial Devices Company,

Panasonic Corporation1, Nagaokakyo City, Kyoto, Japan.

11:15 – 11:30

A 1-inch Optical Format, 80fps, 10.8Mpixel CMOS Image Sensor

9.04

Operating in a Pixel-to-ADC Pipelined Sequence Mode

Isao Takayanagi, Norio Yoshimura, Toshiaki Sato, Shinichiro Matsuo, Tetsuji Kawaguchi,

Kazuya Mori,Shinji Osawa, Timothy Bales, ††Ernesto S. Gattuso, ††Douglas Fettig,

††Bob Gravelle, ††Dan Pates,††Scott Johnson, Junichi Nakamura,

Aptina Japan, Aptina UK, ††Aptina Imaging.

11:30 – 11:45

A 4K2K 60-fps Image Sensor Based on Stagger-laced Dual-exposure Technique

9.05

Yusuke Okada, Takeo Azuma, Toshinobu Matsuno, Hiroyoshi Komobuchi (Panasonic

Corporatio, Kyoto, Japan), Jan Craninckx, Bertrand Parvais, Kyriaki Minoglou,

Koen De Munck, Luc Haspeslagh, Piet De Moor (IMEC, Heverlee, Belgium),

Serge Biesemans (now at TEL Europe).

11:45 – 12:00

24 MPixel 36x24mm2 14 bit Image Sensor in 110/90 nm CMOS Technology

9.06

G. Meynants, J. Bogaerts, B. Wolfs, B .Ceulemans, T. DeRidder, A. Gvozdenović,

E. Gillisjans, X. Salmon, G. VandeVelde, CMOSIS nv, Antwerp,Belgium.

12:00 – 12:15

A 1.1e-rms Temporal Noise 87.5dB DR CMOS Image Sensors With Low-Noise

9.07

Transistors and Column-Parallel ADCs

Min-Woong Seo1, Takehide Sawamoto2, Tomoyuki Akahori2, Zheng Liu2, Keita Yasutomi1,

 

 Keiichiro Kagawa1, and Shoji Kawahito1,2; 1Research Institute of Electronics, Shizuoka

University, Johoku, Hamamatsu, Japan; 2Brookman Technology, Inc, Hamamatsu, Japan.

12:15 – 13:45

Lunch

Session 10

Depth Sensing, TOF, and Time Resolving Imaging.

 

Session co-chairs: David Stoppa (Fondazione Bruno Kessler),

 

                           Edoardo Charbon (Delft University of Technology)

13:45 – 14:00

A CMOS Image Sensor for In-Pixel Background Suppression and Frequency

10.01

and Phase Detection for Structured Light 3-D Acquisition Systems

Hiroki Yabe (Department of Electrical Engineering and Information Systems, The

University of Tokyo, Tokyo, Japan) and Makoto Ikeda (VLSI Design and Education

Center (VDEC), The University of Tokyo, Tokyo, Japan).

14:00 – 14:15

Compact Ambient Light Cancellation Design and Optimization for 3D

10.02

Time-of-Flight Image Sensors

Yibing M. Wang1, Ilia Ovsiannikov1, Sung-Jae Byun2, Tae-Yon Lee2, Yongjei Lee3,

Grzegorz Waligorski1, Hongyu Wang1, Seunghoon Lee2, Dong-Ki Min2, Yoondong Park2 ,

 

Tae-Chan Kim2, Chi-Young Choi2, Gabsoo Han2, and Eric R. Fossum1,2  ;

1Samsung Semiconductor, Inc., Pasadena, CA, USA;

 2Samsung Electronics Co. Ltd., Image Development Team, Giheung, South Korea;

 3Kunsan National University, Dept. of Physics, Jeonbuk, South Korea.

14:15 – 14:30

3dim: Compact and Low Power Time-of-Flight Sensor for 3D Capture Using

10.03

Parametric Signal Processing

Andrea Colaco1;2, Ahmed Kirmani1, Nan-Wei Gong1;2,Tim McGarry3, Laurence Watkins3,

 and Vivek K Goyal1, 1Massachusetts Institute of Technology; 23dim Tech, Inc.;

3Princeton Optronics.

14:30 – 14:45

CMOS Image Sensor for 3-D Range Map Acquisition With Pixel-Parallel

10.04

Correlation In Region of Interest

Takahiko Matsushima1 and Makoto Ikeda2; 1Department of Electrical Engineering

and Information Systems, The University of Tokyo; 2VLSI Design and Education Center

 (VDEC), The University of Tokyo, Tokyo, Japan.

14:45 – 15:00

A Time-of-Flight Image Sensor with Sub-mm Resolution Using Draining Only

10.05

Modulation Pixels

Keita Yasutomi, Takahiro Usui, Sang-Man Han, Masatoshi Kodama,Taishi Takasawa,

Keiichiro Kagawa, Shoji Kawahito; Shizuoka University, Hamamatsu, Japan.

15:00 – 15:15

CMOS Lock-in Pixel Image Sensors with Lateral Electric Field Control for

10.06

Time-Resolved Imaging

Shoji Kawahito, Guseul Baek, Zhuo Li, Sang-Man Han, Min-Woong Seo,

Keita Yasutomi and Keiichiro Kagawa; Research Institute of Electronics,

Shizuoka University, Hamamatsu, Japan.

15:15 – 15:40

Break

Session 11

Invited Presentation and High Speed.

 

Session chair: Shoji Kawahito (Shizuoka University)

15:40 – 15:55

CMOS Image Sensor Pixel with 2D CCD Memory Bank for Ultra High Speed

11.01

Imaging with Large Pixel Count

A. Lahav#, J. Crooks* , B. Marsh*, R. Turchetta *, and A. Fenigstein#,

#TowerJazz Semiconductor Ltd, Migdal Haemek, Israel;

*STFC Rutherford Appleton Laboratory, Didcot, Oxfordshire, UK.

15:55 – 16:10

Ultra‐High Speed Imaging At Megaframes per Second with A Megapixel

Revised

11.02

CMOS Image Sensor

Slides

J. Crooksa, B. Marsha, R. Turchettaa, K. Taylorb, W. Chanb, A. Lahavc, A. Fenigsteinc,

aSTFC Rutherford Appleton Laboratory, Didcot, Oxfordshire, UK;

bSpecialised Imaging, Tring, Hertfordshire, UK;

cTowerJazz Semiconductor Ltd, Migdal Haemek, Israel.

16:10 – 16:25

High Speed, Backside Illuminated 1024x1 Line Imager with Charge Domain

Slides

11.03

frame store in Espros Photonic CMOS Technology

Martin Popp, Beat De Coi, Dieter Huber, Pascal Ferrat, Markus Ledergerber,

Espros Photonics AG, Sargans, Switzerland.

16:25 – 16:40

Toward one Giga frames per second: Multi-Collection-Gate BSI Image Sensors

11.04

Takeharu G. Etoh1, Son V. T. Dao1, Tetsuo Yamada2 and Edoardo Charbon3,

1Ritsumeikan University,  Kusatsu, Japan; 2Tokyo Polytechnic University, Atsugi,

Japan; 3Technische Universiteit Delft, Delft, the Netherlands.

16:40 – 16:55

A 5 Megapixel, 1000fps CMOS Image Sensor with High Dynamic Range

Revised

11.05

and 14-bit A/D Converters

Slides

Bart Cremers, Manuel Innocent, Carl Luypaert, John Compiet, Ishwar Chandra

Mudegowdar, Cedric Esquenet, Genis, Chapinal, Wiet Vroom, Tim Blanchaert,

Thomas Cools, Joost Decupere, Roel Aerts, Peter Deruytere, Tomas Geurts;

ON Semiconductor, Mechelen, Belgium.

16:55 – 17:15

Keynote Presentation: Many Pixels Make Light Work

Slides

11.06

Mike Tompsett

18:30 – 20:30

Dinner and 2013 IISS Awards

 Best Poster Award

    Song Chen, et al.,

    Digital Integration Sensor

Walter Kosonocky Award

    K. Kitamura, et al.

    A 33-Megapixel 120-Frames-Per-Second 2.5-Watt CMOS Image Sensor With Column-Parallel Two-Stage Cyclic Analog-to-Digital Converters

 Exceptional Service Award to

    Albert JP Theuwissen

    "For exceptional contributions to the education of image sensor specialists"

 Exceptional Lifetime Achievement Award to

    Gene Weckler

   "For exceptional contributions to the field of solid-state image sensors"

Sunday, June 16, 2013

7:00 - 8:30

Breakfast

Session 12

Global Shutter

 

Session chair: Albert Theuwissen (Harvest Imaging)

8:30 – 8:45

Low Noise High Efficiency 3.75μm and 2.8μm Global Shutter CMOS

Slides

12.01

Pixel Arrays

Sergey Velichko1, Gennadiy Agranov2, Jaroslav Hynecek2, Scott Johnson1, Hirofumi

Komori2, Jenny Bai2, Igor Karasev2, Rick Mauritzson1, Xianmin Yi2, Victor Lenchenkov2,

 

 Sarah Zhao2, Hyuntae Kim1; 1Aptina, Meridian, ID, USA, 2Aptina, San Jose, CA, USA.

8:45 – 9:00

IR Enhanced Global Shutter Pixel for High Speed Applications

12.02

Assaf Lahav1, Adi Birman1, Dima Veinger1, Amos Fenigstein1, Dexue Zhang2,

Daniel Van Blerkom2; 1TowerJazz Semiconductor Ltd, Migdal Haemek, Israel;

2Forza Silicon Corp., CA, USA.

9:00 – 9:15

3.5 μm Global Shutter Pixel With Transistor Sharing And Correlated

12.03

Double Sampling

B. Wolfs, J. Bogaerts, G. Meynants; CMOSIS nv, Antwerpen, Belgium.

9:15 – 9:30

Global Shutter Pixel with Floating Storage Gate

12.04

Alex Krymski, Luxima Technology LLC/ Alexima, Pasadena, CA, USA.

9:30 – 9:45

High Frame-Rate Global Shutter Image Sensor with Dual-Reset Branch

12.05

SAR ADC Architecture

Daniel Van Blerkom, Jeff Rysinski, Yingying Wang, Kevin Stevulak, Christophe Basset,

Loc Truong, Rami Yassine, Guang Yang, Chao Sun, Kai Ling Ong, Steve Huang,

Forza Silicon Corporation,  Pasadena, CA, USA.

9:45 – 10:00

A 4e-Noise 2/3-inch Global Shutter 1920x1080p120 CMOS-Imager

12.06

Peter Centen1, Steffen Lehr2 , Sabine Roth2, Jeroen Rotte1, Friedrich Heizmann2,

Akbar Momin2 ,Ralf Dohmen2, Karl-Heinz Schaaf2, Klaas Jan Damstra1 , Ruud van Ree1,

 Michael Schreiber2; 1 Grass Valley, Breda, The Netherlands.

.2Viimagic; Villingen, Germany.

10:00 – 10:25

Break

Session 13

Invited Presentation, Oversampling, and High Dynamic Range

 

Session co-chairs: Shigetoshi Sugawa (Tohoku University),

 

                           Vladimir Koifman (Analog Value)

10:25 – 10:45

Invited Presentation: Image Quality of Oversampling Cameras

13.01

Juha Alakarhu, Samu Koskinen, Eero Tuulos, Nokia Corporation, Camera

Technologies, Tempere, Finland.

10:45 – 11:00

Overcoming the Full Well Capacity Limit: High Dynamic Range Imaging

Slides

13.02

Using Multi-Bit Temporal Oversampling and Conditional Reset

Thomas Vogelsang, Michael Guidash, Song Xue, Rambus Inc, Sunnyvale, CA, USA.

11:00 – 11:15

A Comparison of High Dynamic Range CIS Technologies for Automotive

13.03

Applications

Johannes Solhusvik, Jiangtao Kuang, Zhiqiang Lin, Sohei Manabe, Jeong-Ho Lyu,

Howard Rhodes, OmniVision Technologies.

11:15 – 11:30

An Overflow Photo-Gate Pixel Enables High FWC and Improved Proton

13.04

Radiation Tolerance in CMOS Pixels

Yannick De Wit & Manuel Innocent, ON-Semiconductor, Mechelen, Belgium.

11:30 – 11:45

A CMOS HDR Imager with an Analog Local Adaptation

13.05

Gilles Sicard1, Hassan Abbas1, Hawraa Amhaz1 ,*, Hakim Zimouche1,**,

Robin Rolland2, David Alleysson3; 1CNRS, G-INP, UJF, TIMA Laboratory,

Grenoble, France; 2CIME-Nanotech, Grenoble, France; 3CNRS, UPMF, LPNC

Laboratory, Grenoble, France; *Now with CEA LETI, **Now with LIRMM

Laboratory, Montpellier, France.

11:45 - 12:00

Wrap Up and Closing

Boyd Fowler, Co-Chair

12:00 - 13:30

Lunch

Fin