PROGRAM

1999 IEEE Workshop on Charge-Coupled Devices and

Advanced Image Sensors

Papers should be cited as:

Title, Author, in Proc. 1999 IEEE Workshop on CCDs and Advanced Image Sensors, Karuizawa, Japan, June 10-12 1999.

Thursday, June 10

8:30 am Opening Remarks N. Teranishi

J. Nakamura

Session 1. CCD Image Sensors (I)

Chairman N. Teranishi (NEC)

8:45 am A 2/3-in. 2,200k-pixel FIT-CCD for HDTV 1080i

S. Suzuki, T. Yamaguchi, T. Torikai, N. Iwawaki, M. Yamanaka,

K. Hirata, H. Tanaka, K. Yokozawa, M. Tamura and T. Imanishi

CCD Division, Matsushita Electronics Corporation, Japan

9:10 BCD-A New High Performance Nondestructive Charge Detection Concept for CCD Image Sensors

J. Hynecek and H. Shibuya*

ISETEX Inc, U.S.A.

*Texas Instruments Japan Limited, Japan

9:35 Influence of Sensor Settings and Doping Profile on Dark Current in FT-CCD's

H. O. Folkerts, A. Heringa, H. Peek, D. Verbugt and L. Korthout

Philips Semiconductors Image Sensors, The Netherlands

10:00 Dynamic Range Improvement by Narrow-Channel Effect Suppression and Smear Reduction Technologies in Small Pixel IT-CCD Image Sensors

A. Tanabe, Y. Kudoh, Y. Kawakami, K. Masubuchi, S . Kawai, T. Yamada, M. Morimoto*, K. Arai, K. Hatano**, M. Furumiya**, Y. Nakashiba**,N. Mutoh, K. Orihara and N. Teranishi

Silicon Systems Research Labs., NEC, Japan

*System Micro Division, NEC, Japan

**ULSI Device Development Labs. NEC, Japan

10:25 COFFEE BREAK

Session 2. CMOS Image Sensors (I)

Chairman J. Nakamura (Olympus)

10:55 am 256 x 256 Pixel CMOS Imager with Linear Readout and 120dB Dynamic Range

M. Schanz, C. Nitta, T. Eckart, B. J. Hosticka and R. Wertheimer*

Fraunhofer Institute ofMicroelectronic Circuits and Systems, Germany

*Center of Research and Engineering, BMW; Germany

11:20 692 x 504 CMOS APS Imager with Extended Dynamic Range and on-chip 12~bit ADC

WITHDRAWN

G.W. Hughes, N. McCaffrey, D. Sauer, F. Hsueh, P. Levine, and F. S. Pantuso

Sarnoff Corporation. USA

11:45 A 1/3" VGA CMOS Imaging System on a Chip

S. Agwani, R. Cichomski, M. Gorder, A. Niederkorn, M. Skow and K. Wanda

Motorola Inc., U.S.A.

12:10 Low Dark Current Pinned Photo-Diode for CMOS Image Sensor

I. Inoue, H. Ihara, H. Yamashita, T. Yamaguchi, H. Nozaki and R. Miyagawa

Toshiba Corp. Japan

12:10 LUNCH

Session 3. CMOS Image Sensors (II)

Chairman B. Dierickx (IMEC)

1:50pm A Smart CMOS Imager with On-Chip High-Speed Windowed Centroiding Capability

C. Sun, G. Yang, C. Wrigley, O. Y. Pecht* and B. Pain

Center for Space Microelectronics Technology, JPL, U.S.A.

*Electrical and Computer Eng. Dept., Ben-Gurion University, Israel

2:15 Time-Domain Correlation Image Sensor: First CMOS Realization of Demodulator Pixels Array

S. Ando and A. Kimachi

Dept. Mathematical Eng. and Information Physics, Univ. of Tokyo, Japan

2:40 Spatially Variant Flexible Sampling Control Integrated on a Sensor Focal Plane

Y. Ohtsuka, T. Hamamoto and K. Aizawa

Dept. Electrical Engineering, University of Tokyo, Japan

3:05 Image Transmission with a Retina-Like CMOS Camera

G. Sandini, P. Questa*, A. Mannucci*, F. Ciciani*, D. Scheffer**, and B. Dierickx**

LIRA-Lab, DIST, University of Genova, Italy

*Unitek Consortium, Italy

**IMEC-Leuven, Belgium

3:30 COFFEE BREAK

Session 4. Poster Session

Chairman J. Hynecek (ISETEX)

K. Orihara (NEC)

4:00pm A Digital Pixel Image Sensor with 1-bitADC and 8-bit Pulse Counter in Each Pixel

F. Andoh, M. Nakayama, H. Shimamoto and Y. Fujita

Science & Technical Research Laboratories, NHK, Japan

*Engineering Administration Department, NHK, Japan

A 128 x 128 Photo-Gate CMOS-APS with 10-bit Successive Approximation ADC

WITHDRAWN

J. Solhusvik. J.Bjornsen, S.Eikedal

Electronic Systems Dept., ABB, Norway

4:05 CMOS APS with Autoscaling and Customized Wide Dynamic Range

O. Y. Pecht and A. Belenky

Electrical and Computer Eng. Dept., Ben-Gurion Univ. of the Negev, Israel

4:10 A CMOS Image Sensor Integration Gamma Correction and Gain Control Functions

M. Sasaki, S. Kawahito* and Y. Tadokoro*

Sendai National College of Technology, Japan

*Toyohashi University of Technology, Japan

4:20 An a-Se HARP Layer for a Solid-State Image Sensor

W. D. Park, Y. Takiguchi*, M. Kosugi*, M. Kubota*, Y. Ohkawa*, K. Miyakawa*, S. Suzuki*, K. Shidara*, K. Tanioka*, A. Kobayashi**, and T. Hirai**

Dongyang University, Korea

*Science and Technical Research Laboratories, NHK, Japan

**Hamamatsu Photonics K.K., Japan

4:25 Buried Double Junction Pixel Using Green and Magenta Filters

K. M. Findlater, P. B. Denyer*, R. K. Henderson*, J. E. D. Hurwitz*, J. M. Raynor* and D. Renshaw

Dept. of Electronics and Electrical Engineering, The Univ. of Edinburgh , UK

*VLSI Vision Ltd., UK

4:30 A Vertically Integrated High Resolution Active Pixel Image Sensor for Deep Submicron CMOS Processes

S. Benthien*, M. Wagner*, M. Verhoeven*, M. Bohm* **, B.Schneider**, B. van. Uffel*** and F. Librecht***

*Silicon Vision GmbH, Germany

**IHE, Universitat-GH Siegen, Germany

***AGFAGevaert N.V, Belgium

4:35 On-Chip Offset Calibrated Logarithmic Response Image Sensor

S. Kavadias, B. Dierickx and D. Scheffer

IMEC, Belgium

4:40 128 x 64 Pixels Adaptive-Integration-Time Image Sensor

T. Hamamoto, Y. Ino and K. Aizawa*

Dept. of Elec. Eng., Science University of Tokyo, Japan

*Dept. of Elec. Eng., University of Tokyo, Japan

4:45 Characterization of CMOS Photodiodes for Image Application

C. C. Wang, I. L. Fujimori and C. G. Sodini

Department of Elec. Eng. and Computer Science, MIT, U.S.A.

4:50 Design and Simulation of a CMOS Sensor Array

Z. J. Wang and H. L. Kwok

Dept. of Electrical and Computer Engineering, University of Victoria, Canada

4:55 A Passive Photodiode Pixel with Memory

J. Melander, M. Gokstorp* and R. Forchheimer

IVP, Integrated Vision Products AB, Sweden

*Photobit Corporation, U.S.A.

5:00 Focal Plane Processing for a Fast Detection of 2D Motion Vectors

Z. Li and K. Aizawa

Dept. of Electrical Engineering, University of Tokyo, Japan

5:05 Fast Square-area Detection Algorithm Using Automata for VLSI Implementation

J. Akita, K. Maeda, A. Kitagawa and M. Suzuki

Dept. of Electrical and Comp. Eng., Kanazawa University, Japan

5:10 Non-Linear AD Conversion, Tolerant for Pixel Offset Errors

B. Dierickx

IMEC, Belgium

5:15 A CCD-CMOS Image Sensor for Ultra-High Speed Image Capturing

T. Etoh, H. Mutoh* and K. Takehara

Kinki University, Japan

*Link Research Corporation, Japan

5:20 The Ideal Response Curve of Colored Photodiodes

G. Meynants and B. Dierickx

IMEC, Belgium

5:25 3-D Wave Optical Simulation of Inner-Layer Lens Structure

H. Mutoh

Link Research Corporation, Japan

5:30 Novel pH Imaging Sensors Based on CCD Technology

K. Sawada, S. Mimura*, K. Tomita*, T. Nakanishi*, H. Tanabe*, M. Ishida, and T. Ando**

Dept. of Electrical and Electronic Eng., Toyohashi Univ. of Technology, Japan

*HORIBA, Ltd., Japan

**Research Institute of Electronics, Japan

5:35 High Performance Schottky Photodiode Based on Polycrystalline ITO Deposited at Room Temperature

Q. Ma and A. Nathan

Dept. of Electrical and Computer Engineering, Univ. of Waterloo, Canada

5:40 A Study for Image Pickup over Nyquist Rate Using Digital Signal Processing

T. Kimura, N. Takatsuka, T. Arano and H. Shiraki

Dept. of Systems Engineering, Faculty of Engineering, Ibaraki Univ., Japan

5:45 CCD and APS - Both Together to the Comet P/Wirtanen

T. Behnke, H. Michaelis, M. Tschentscher and S. Mottola

Institute of Planetary Exploration, German Aerospace Center, Germany

5:50 Correlation Between Leakage Current and Overlap Capacitance in a-Si:H TFTs

A. Nathan, D. Pereira, M. Austin

Electrical and Computer Engineering, University of Waterloo, Canada

5:55 Measurement of Substrate Impurity Fluctuation in CCD Image Sensors

H. Shiraki, T. Kimura, T. Arano and N. Takatsuka

System Dept., Faculty of Engineering, Ibaraki University, Japan

6:00 A Family of High Performance TDI Image Sensors

G. Weale, C. Flood, M. Ledgerwood, J. G. Mihaychuk, S. Kamasz, H. Siefken, D. Deering and G. Ingram

DALSA Inc., Canada

6:05 Technology and Performance of VGA-Format Progressive IT-CCD Imagers with Double Transfer Gate Four-Phase Pixel Structure

Y. J. Yu and K. K. Kwon

CCD R&D Lab., System IC Group, LG Semicon Ltd., Korea

6:10 pm -9:00 pm POSTER VIEWING, RECEPTION

Friday, June 11

Session 5. CMOS Image Sensors (III)

Chairman P. Wong (IBM)

8:15 am Analysis and Enhancement of Low-Light-Level Performance of Photodiode type CMOS Active Pixel Imagers Operated with Sub-Threshold Reset

B. Pain, G. Yang, M. Ortiz, C. Wrigley, B. Hancock and T. Cunningham

Jet Propulsion Laboratory, California Institute ofTechnology, U.S.A.

8:40 An Improved Digital CMOS Imager

O. B. Kwon*, K. N. Park*, D. Y. Lee*, K. J. Lee*, S. C. Jun*, C. K. Kim*, J. W. Eom*, A. S. Choi*, Y. B. Lee* and W. Yang* **

*Image Sensor Dev. System I C R&D, Hyundai Electronics Inc, Korea

**Harvard University, U.S.A.

9:05 A Low-Light to Sunlight, 60 Frames/s, 80k Pixel CMOS APS Camera-on-a Chip With 8b Digital Output

S. L. Barna, L. P. Ang, B. Mansoorian and E. R. Fossum

Photobit Corp., U.S.A.

9:30 A Linear-Response, High-Dynamic Range CMOS Imager Suitable for Spectroscopic Applications

D. Qian and W. Yang

Division of Engineering and Applied Sciences, Harvard University, U.S.A.

9:55 COFFEE BREAK

Session 6. Non-Visible Image Sensors

Chairman D. McGrath (MIT)

10:25 am Current Skimming-Based CMOS Readout Architectures for Quantum Well Infrared Photodetectors

C. Friedman, A. Arbel and R. Ginosar

VLSI Systems Research Center, Israel Institute ofTechnology, Israel

10:50 A Stacked CMOS APS for Charge Particle Detection and its Noise Performance

I. Takayanagi, J. Nakamura, H. Yurimoto*, T. Kunihiro*, K. Nagashima*, and K. Kosaka**

Olympus Optical Co., Ltd., Japan

*Tokyo Institute of Technology, Japan

**Tokyo Technology, Inc., Japan

11:15 Charge Loss in the Channel Stop Regions of the X-ray CCD

G. Prigozhin, M. Pivovaroff, S.Kissel, M. Bautz and G. Ricker

Center for Space Research, MIT, U.S.A.

11:40 A Partially Overlapped X-ray Imaging Pixel with Low Leakage and High Sensitivity

B. Park and A. Nathan

Electrical and Computer Engineering Dept., University of Waterloo, Canada

12:05 A Model for Object Detectability Close to Defective Columns in X-Ray Imaging

WITHDRAWN

R. Dyck and M. Sayag;

Lockheed Martin Fairchild Systems, U S.A.

12:30 LUNCH

Session 7. Large Format Image Sensors

Chairman R. Bredthauer (Semiconductor Tech. Associates)

T. Kuroda (MEC)

1:45pm Performance Characteristics of a 9216 x 9216 Pixel CCD

D. Wen, R. Bredthauer, P . Bates, P. Vu and R. Potter

Lockheed Martin Fairchild Systems, U.S.A.

2:10 An 8M-CCD for an Ultra High Definition TV Camera

C. Smith, M. Farrier, K. Mitani*, Q. Tang and G. Ingram

DALSA Inc., Canada

*NHK, Japan

2:35 Large Format CCD Image Sensors Fabricated on High Resistivity Silicon

S. E.Holland, D. E. Groom, M. E. Levi, N. P. Palaio, S. Perlmutter, R. J. Stover* and M. Wei*

Lawrence Berkeley National Laboratory, University of California, U.S.A.

*Lick Observatory, University of California Observatories, U.S.A.

3:00 A Page Width CMOS Image Sensor Array

J.Tandon

Xerox Corporation, U.S.A

3:25 COFFEE BREAK

Session 8. CMOS Image Sensors (IV) and Image Sensor Characterization

Chairman O. Yadid-Pecht (Ben-Gurion Univ. of Negav)

T. Tanioka (NHK)

3:55 pm First Multispectral Diode Color Imager with Three Color Recognition and Color Memory in Each Pixel

M. Sommer*, P. Rieve*, M. Verhoeven*, M. Bohm* **, B. Schneider**, B. van. Uffel*** and F. Librecht***

*Silicon Vision GmbH, Germany

**IHE, Universitat-GH Siegen, Germany

***Agfa-Gevaert N.V., Belgium

4:20 Self-Calibrating Logarithmic CMOS Image Sensor with Single Chip Camera Functionality

M. Loose, K. Meier and J. Schemmel

IHEP, Heidelberg University, Germany

4:45 A Novel CMOS-APS Configuration with an Extremely Low Fixed Pattern Noise

T. I. Watanabe

Corporate Research Labs., Fuji Xerox Co., Ltd., Japan

5:10 CCD Requirements for Digital Photography

R. L. Baer

Hewlett-Packard Laboratories, U.S.A.

5:35 Test Methodologies for Digital CMOS Camera-on-a-Chip Image Sensors

G. Waligorski, M. B. Kaplinsky, V Berezin and E. R. Fossum

Photobit Corporation, U.S.A.

Session 9. Discussion Session

Chairman E. Fossum (Photobit)

Saturday, June 12

Session 10. Walter Kosonocky Award

Chairman Albert Theuwissen (Philips)

8:15 am -8:45 am Walter Kosonocky Award Presentation

Session 11. CMOS Image Sensors (V)

Chairman P. Denyer (VVL)

8:45 am Area Auto Focus CMOS Sensor

H. Takahashi, T. Ezaki, M. Shinohara, S. Furudate, H. Nakamura, T. Ichise, and S. Sugawa

Device Development Center, Canon Inc., Japan

9:10 On Chip Focal Plane Filtering for CMOS Imagers

J. Huppertz, T. Kneip, M. Schwarz and B. J. Hosticka

Fraunhofer Institute ofMicroelectronic Circuits and Systems, Germany

9:35 CMOS Image Sensor Overlaid with a HARP Photoconversion Layer

T. Watabe, H. Ohtake, K. Yamano, M. Yamauchi, T. Tajima, Y. Takiguchi, Y. Ishiguro, T. Hayashida M. Kosugi, H. Kokubun, T. Watanabe and M. Abe

NHK Science and Technical Research Laboratories, Japan

10:00 LARS II -A High Dynamic Range Image Sensor with a-Si:H Photo Conversion Layer

T. Lule*, H. Keller*, M. Wagner* and M. Bohm* **

*Silicon Vision GmbH, Germany

**IHE, Universitat-GH Siegen, Germany

10:25 COFFEE BREAK

Session 12. CCD Image Sensors (II)

Chairman K. Yonemoto (Sony)

N. Mutoh (NEC)

10:55 am Performance of FT-CCD Image Sensor with Single Layer Poly-Silicon Electrode

Y Okada, Y Ohtsuru, S. Izawa, N. Taino and M. Hamada

CCD Development Dept., MOS-LSI Division, SANYO Electric Corp., Japan

11:20 Evaluation of Subsampling in a 2/3" 2-M Pixel FT-CCD

J. T. Bosiers, A. C. Kleimann, M. Horemans and L. L. Cam

Philips Semiconductors Image Sensors, The Netherlands

11:45 Technology to Eliminate Yield-Limiting Elements in CCD Imagers

H. Peek, D. Verbugt, H. Stoldt and A. D. Veirman

Philips Semiconductors Image Sensors, The Netherlands

12:10 1/2" 2Mpixel Full Frame CCD Sensor for Digital Photography

Z. Pektas, J. Toker and S. Bencuya

Image Sensor Technology Division, Polaroid Corporation, U.S.A.

12:35 A 1/4-inch 630k-pixel IT-CCD Image Sensor with High-Speed Capture Capability

M. Kimura, H. Yoshida, I. Hirota, A. Yamamoto, K. Ezoe, Y Okazaki,

Y. Takamura, H. Mori* and Y Fujita*

Semiconductor Company, SONY Corporation, Japan

*SONY Kokubu Corporation, Japan

1:00 pm CLOSING REMARKS