2011 IISW Program

2011 INTERNATIONAL IMAGE SENSOR WORKSHOP
Hakodate-Onuma Prince Hotel June 8-11, 2011 Hokkaido, Japan
PROGRAM
Wednesday, June 8th 2011
08:00-08:30	Registration
	Welcome
08:30-08:45	Opening
Session 01	Small Pixel Sensors I
	Session chair: Albert Theuwissen (Harvest Imaging)
08:45-09:05	Pixel Continues to Shrink….Small Pixels for Novel CMOS Image Sensors
R1	G. Agranov, S. Smith, R. Mauritzson, S, Chieh, U. Boettiger, X. Li, X. Fan, A. Dokoutchaev, B. Gravelle, H. Lee. W. Qian, R. Johnson. Aptina LLC, USA
09:05-09:25	A Review of the 1.4 mm Pixel Generation
R2	R. Fontaine. Chipworks, Canada
09:25-09:45	SNR Performance Comparison of 1.4mm Pixel : FSI, Light-guide, and BSI
R3	Kyungho Lee, JungChak Ahn, Bumsuk Kim, Taesub Jung, Sangjoo Lee, Moosup Lim, Chang-Rok Moon, Sangil Jung, Junetaeg Lee, Hongki Kim, Duckhyung Lee, Hiroshige Goto, Chi-Young Choi, and Yun-Tae Lee. Samsung Electronics Co., Ltd., Korea
09:45-10:05	Pixel-to-Pixel Isolation by Deep Trench Technology: Application to CMOS Image Sensor
R5
	A. Tournier, F. Leverd, L. Favennec, C. Perrot, L. Pinzelli, M. Gatefait, N. Cherault, D. JeanJean, J.-P. Carrere, F. Hirigoyen, L. Grant, F. Roy. STMicroelectronics, France
10:05-10:25	Break
Session 02	Small Pixel Sensors II
	Session chair: Jung Chak Ahn (Samsung)
10:25-10:45	Quantum Efficiency Simulation Using Transport Equations
R6	William Gazeley and Dan McGrath. Aptina Imaging, USA
10:45-11:05	Crosstalk Metrics and the Characterization of 1.1μ-pixel CIS
R7	C. Chao, H.Y. Tu, K.Y. Chou, P.S. Chou, F.L. Hsueh, W.H. Wei, R.J. Lin, and B.C. Hseih. Taiwan Semiconductor Manufacturing Company, Taiwan, ROC
11:05-11:25	Back Illuminated Vertically Pinned Photodiode with in Depth Charge Storage
R9	J. Michelot^1,2, F. Roy^1, J. Prima^1, C. Augier^1, F. Barbier^1, S. Ricq^1, P. Boulenc^1, Z. Essa^1, L. Pinzelli^1, H. Leininger^1, M. Gatefait^1, J.-E. Broquin^2. ^1STMicroelectronics, France; ^2IMEP-LAHC, France
11:25-11:45	The Mass Production of Second Generation 65 nm BSI CMOS Image Sensors
R10	H. Rhodes, S. Manabe, V.C.Venezia, K. C. Ku, Z. Lin, P. Fu, D. Tai, A. Shah, R. Liu, R. Yang, P. Matagne, S. Hu. OmniVision Technologies, Inc.,USA
11:45-13:15	Lunch
Session 03	Invited Presentation and Process Technology
	Session chair: Shou-Gwo Wuu (TSMC)
13:15-13:45	Invited Presentation-I
I1	Technology of Color Filter Materials for Image Sensor
	Hiroshi Taguchi, Masashi Enokido. FUJIFILM Electronic Materials Co., Ltd.,Japan
13:45-14:05	Highly Ultraviolet Light Sensitive and Highly Reliable Photodiode with Atomically Flat Si Surface
R11
	Rihito Kuroda, Taiki Nakazawa, Katsuhiko Hanzawa and Shigetoshi Sugawa. Tohoku University, Japan
14:05-14:20	High Performance and High Yield Junction Formation with Full Device Exposure Laser Thermal Annealing
R12
	K. Huet^1, C. Boniface^1, J. Venturini1, Z. Ait Fqir Ali-Guerry^2,3, R. Beneyton^2, M.Marty², D. Dutartre^2, F. Roy^2.^1EXCICO, France; ^2STMicroelectronics, France; ^3Institut des Nanotechnologies; France
14:20-14:35	A Highly Manufacturable Backside Illumination Technology for CMOS Image Sensor
R13
	Yunki Lee, Chang-rok Moon, Doowon Kwon, Jinho Kim, Byoung jun Park, Yuyeon Yu, Gilsang Yoo, Sanghoon Kim, Seunghoon Shin, Taehun Lee and Duckhyung Lee. Samsung Electronics Co. LTD., Korea
14:35-14:55	Break
Session 04	Poster Presentations
14:55-17:10	Session chair: Jun Ohta (Nara Institute of Science and Technology) Lindsay Grant (ST Microelectronics)
P1	Performance Improvements of Polarization Analyzing CMOS Image Sensor Using Multiple Pixel Array Architecture and 65nm Standard CMOS Process
	Takashi TOKUDA, Hitoshi MATSUOKA, Sanshiro SHISHIDO, Toshihiko NODA, Kiyotaka SASAGAWA and Jun OHTA. Nara Institute of Science and Technology, Japan
P2	High Resolution CCD Polarization Imaging Sensor
	Viktor Gruev and Tim York. Washington University, USA
P4	A 2/3-type 2.3-Mega Pixel IT-CCD for HD 1080p60
	Takuya Asano, Yoshinori Horikawa, Kazuaki Hirata, Ryoichi Nagayoshi, Akira Tsukamoto. Panasonic Corporation, Japan
P5	A High Speed CMOS Dual Line Scan Imager for Industrial Applications
	P. Donegan, L. Korthout, M. Moser, V. Bommu, Y. Lin, A. Kumar, F. Feng, D. Marchesan, D.Verbugt, P. Albertini, W.de Haan, S. Xie, D. Atos, W. Maes, J. de eulmeester, M. Sonder, E. Fox. Teledyne DALSA Corporation, Canada
P6	Ageing Effects on Image Sensors: Neutron Irradiation Studies on Wafer and Packaged Devices
	Gayathri G. Nampoothiri^1, Albert J. P. Theuwissen^1, 2. ^1Delft University of Technology, the Netherlands; ^2Harvest Imaging, Belgium
P7	Analog Multiplex Bus Readout Method to Reduce Ghosting Image Artifact in CMOS Image Sensors
	Rahul Sankhe, Raja Reddy P. ON Semiconductor Technology India Pvt. Ltd., India
P8	Study of Image Artifacts Caused by the Single-Ended CTA Column Comparator Used in CMOS Imagers
	M.D. Purcell, G.G. Storm, J. K Moore, M. Wigley, D. Tolmie. STMicroelectronics, UK
P9	Column-Parallel Circuits with Digital Correlated Multiple Sampling for Low Noise CMOS Image Sensors
	Yue Chen^1, Yang Xu^1, Adri J. Mierop^2 and Albert J.P. Theuwissen^1,3. ^1Delft University of Technology, the Netherlands;^2Teledyne DALSA B.V., the Netherlands; ^3Harvest Imaging, Belgium
P10	Post-ADC Digital Filtering in the CIS with the Column Single Slope ADC
	Toshinori Otaka, Takumi Hiraga and Takayuki Hamamoto. Tokyo University of Science, Japan
P12	Prototype Line‐Scan Device with 12‐bit Charge Domain Column‐Parallel Successive Approximation ADC
	Laurens Korthout, Daniel Verbugt, Paul Donegan, Adri Mierop. Teledyne DALSA Professional Imaging, The Netherland
P13	Analysis of Front‐end Multiplexing for Column Parallel Image Sensors
	Daniel Van Blerkom, Steve Huang, Loc Truong and Barmak Mansoorian. Forza Silicon Corporation, USA
P15	Accurate Capacitance and RC Extraction Software Tool for Pixel, Sensor, and Precision Analog Designs
	M. Ershov^1, M.Cadjan^1, Y.Feinberg^1, X.Li^2, G.C.Wan^2, and G.Agranov^2. ^1Silicon Frontline Technology, USA; ^2Aptina Imaging, USA
P16	Single-Photon Avalanche Diodes in sub-100nm Standard CMOS Technologies
	Mohammad Azim Karami, Hyung-June Yoon, and Edoardo Charbon. Delft University of Technology, Netherlands
P17	An Infra-Red Sensitive, Low Noise, Single-Photon Avalanche Diode in 90nm CMOS
	Eric A. G. Webster^1, Justin A. Richardson^2, Lindsay A. Grant^3, David Renshaw^1, Robert K. Henderson^1. ^1University of Edinburgh, UK; ^2University of Edinburgh and Dialog Semiconductor; ^3ST Microelectronics, UK
P19	Enhanced X-RAY CMOS Sensor Panel for Radio and Fluoro Application Using a Low Noise Charge Amplifier Pixel with a Partially Pinned PD
	Assaf Lahav^1, Tomer Leitner, Raz Reshef & Amos Fenigstein. ^1Tower Semiconductor LTD., Israel
P20	L²CMOS Image Sensor for Low Light Vision
	Pierre Fereyre, Frédéric Devrière, Stéphane Gesset, Marie Guillon, Thierry Ligozat, Frédéric Mayer, Gareth Powell, Vincent Prevost, Frédéric Ramus, Olivier Seignol. e2v semiconductors, France
P21	Color Channel Weights in a Noise Evaluation
	Samu Koskinen, Eero Tuulos, Juha Alakarhu. Nokia, Finland
P22	Design and Preliminary Evaluation of CMOS Image Sensor with Pseudorandom Pixel Placement
	Junichi Akita, Yui Maeda, Akio Kitagawa. Kanazawa University, Japan
P24	Photo-Sensitive Area Modulation Pixel for 3D Real-Time CCD Imager
	Y. Hashimoto, F. Kurihara, K. Murakami, K. Imai, K. Taniguchi^1. Matsushita Electric Works, Ltd.,Japan;^1Osaka University, Japan
P25	CMOS Image Sensor for 3-D Range Map Acquisition Using Time Encoded 2-D Structured Pattern
	Hiroki Yabe, Makoto Ikeda. University of Tokyo, Japan
P27	An Integration Time Prediction Based Algorithm for Wide Dynamic Range 3D-Stacked Image Sensors
	Adi Xhakoni^1, David San Segundo Bello^2, Koen De Munck^2, Padmakumar Ramachandra Rao^2, Piet De Moor^2 and Georges Gielen^1. ^1K.U.Leuven, Belgium; ^2IMEC, Belgium
P28	A QCIF 145dB Imager For Focal Plane Processor Chips Using a Tone Mapping Technique in Standard 0.35μm CMOS Technology
	S. Vargas-Sierra, G. Liñán-Cembrano, A. Rodríguez-Vázquez. CSIC and Universidad de Sevilla, Spain
P29	Temperature Compensation Scheme for Logarithmic CMOS Image Sensor
	Hakim Zimouche, Hawraa Amhaz and Gilles Sicard. CNRS, France
P30	Smart Readout Technique based on Temporal Redundancies Suppression Designed for Logarithmic CMOS Image Sensor
	Hawraa AMHAZ, Hakim ZIMOUCHE and Gilles SICARD. CNRS, France
P31	Backside Illuminated Hybrid FPA Achieving Low Cross-Talk Combined with High QE
	Koen De Munck, Padmakumar Rao Ramachandra, Kiki Minoglou, Joeri De Vos, Deniz Sabuncuoglu and Piet De Moor. IMEC, Belgium
P32	Backside Illuminated CMOS Snapshot Shutter Imager on 50μm Thick High Resistivity Silicon
	Stefan Lauxtermann, Dirk Leipold. Sensor Creations., Inc., USA
P33	CMOS Image Sensor with an Overlaid Organic Photoelectric Conversion Layer: Optical Advantages of Capturing Slanting Rays of Light
	Mikio Ihama, Hiroshi Inomata, Hideki Asano, Shinji Imai, Tetsurou Mitsui, Yuuki Imada, Masayuki Hayashi, Takashi Gotou, Hideyuki Suzuki, Daigo Sawaki, Mitsumasa Hamano, Toshihiro Nakatani, Yasuyoshi Mishima. FUJIFILM Corporation, Japan
P34	The Gigavision Camera - A 2Mpixel Image Sensor with 0.56μm2 1-T Digital Pixels
	HyungJune Yoon and Edoardo Charbon. Delft University of Technology, The Netherlands
P35	Low Noise High Dynamic Range 2.3Mpixel CMOS Image Sensor Capable of 100Hz Frame Rate at Full HD Resolution
	Paul Vu, Boyd Fowler, Steve Mims, Chiao Liu, Janusz Balicki, Hung Do, Wang Li, Jeff Appelbaum. Fairchild Imaging, Inc., USA
17:10-	Poster Viewing
Thursday, June 9th 2011
Session 05	Time-of-Flight and Time-Resolved Imaging
	Session chair: Pierre Magnan (ISAE)
08:30-08:45	Experimental Comparison of Four Different CMOS Pixel Architectures Used in Indirect Time-of-Flight Distance Measurement Sensors
R15
	D. Durini, A. Spickermann, J. Fink, W. Brockherde, A. Grabmaier, B. J. Hosticka. Fraunhofer Institute for Microelectronic Circuits and Systems, Germany
08:45-09:05	Time Of Flight Image Sensors in 0.18μm CMOS Technology: a Comparative Overview of Different Approaches
R16
	David Stoppa^1, Lucio Pancheri^1, Nicola Massari^1, Mattia Malfatti^1, Matteo Perenzoni^1, Gianmaria Pedretti^1, Gian-Franco Dalla Betta^2. ^1Fondazione Bruno Kessler, Italy; ^2DISI, University of Trento, Italy
09:05-09:20	Dark Current Suppression during High Speed Photogate Modulation for 3D ToF Imaging Pixel
R17
	Tae-Yon Lee^1, YongJei Lee^1, Dong-Ki Min^1, Joonho Lee^1, Young-Gu Jin^1, Yoondong Park^1, and Chilhee Chung^1, Ilia Ovsiannikov^2 and Eric R. Fossum^1,2.^1Samsung Electronics, South Korea; ^2Samsung Semiconductor Inc., USA
09:20-09:35	Hybrid Back-Side Illuminated Distance Measuring Sensor Array with Ring Gate Structure
R18
	Mitsuhito Mase, Takashi Suzuki, Shigeyuki Nakamura, Michito Hirayanagi, Naoto Sakurai, Terumasa Nagano, Atsushi Ishida, Seiichiro Mizuno and Mitsutaka Takemura. Hamamatsu Photonics K.K.,Japan
09:35-9:50	High‐Speed General Purpose Demodulation Pixels Based on Buried Photodiodes
R20	Lysandre‐Edouard Bonjour ^1,2, Thomas Baechler^1, Maher Kayal ^2. ^1CSEM SA, Switzerland; ^2EPFL STI IEL GR‐KA, Switzerland
9:50-10:10	A CMOS Image Sensor with Draining Only Modulation Pixels for Sub-Nanosecond Time-Resolved Imaging
R21
	Shoji Kawahito, Zhuo Li and Keita Yasutomi. Shizuoka University, Japan
10:10-10:30	Break
Session 06	Invited Presentation and Various Imager Design Topics
	Session chair: Johannes Solhusvik (Aptina Norway)
10:30-11:00	Invited Presentation-II
I2	New Application Areas Made Possible by High Speed Vision
	Masatoshi Ishikawa. University of Tokyo, Japan
11:00-11:15	A Multi-Functional Imager for TOF and High Performance Video Applications Using a Global Shuttered 5mm Cmos Pixel.
R22
	Peter Centen^1, Juul v.d Heijkant^1, Jeroen Rotte^1, Klaas Jan Damstra^1, Assaf Lahav^2 , Adi Birman^2,Steffen Lehr^3, Sabine Roth^3, Ruud van Ree^1. ^1 Grass Valley, Netherlands; ^2 TowerJazz, Israel; ^3 Viimagic, Germany
11:15-11:30	Backside Thinned, 2.5 e-RMS, BSI, 700fps, 1760x1760 Pixels Wave-Front Imager with 88 Parallel LVDS Output Channels
R23
	Bart Dierickx^1, Benoit Dupont^1, Arnaud Defernez^1, Martin Fryer^2, Paul Jorden^2, Andrew Walker^2, Andrew Pike^2, Paul Jerram^2, Jerome Pratlong^2. ^1Caeleste, Belgium; ^2 e2v, UK
11:30-11:50	CCD and CMOS Combined, Low Noise and Low Power Dissipation Linear Image Sensor with Variable Charge Mixing Mode
R24
	Makoto Monoi^1, Masayuki Ohki^3, Yoshihiro Hayakawa^3, Syu Sasaki^2 .^1 Toshiba Corporation, Japan; ^2 Iwate TOSHIBA electronics, Japan; ^3 Toshiba micro-electronics, Japan
11:50-12:05	An Implantable CMOS Image Sensor with Light Guide Array Structure and Fluorescent Filter
R25
	Kiyotaka Sasagawa^1,2, Keisuke Ando^1, Takuma Kobayashi^1,2, Toshihiko Noda^1,2, Takashi Tokuda^1,2, Yumiko Hatanaka^1,2, Hideki Tamura^1,2, Sadao Shiosaka^1,2, Jun Ohta^1,2. ^1Nara Institute of Science and Technology, Japan; ^2Japan Science and Technology Agency, Japan
12:05-12:20	An Autonomous micro-Digital Sun Sensor Implemented with a CMOS Image Sensor Achieving 0.004º Resolution @ 21mW
R26
	Ning Xie^1, Albert J.P. Theuwissen^1, 2, Bernhard Büttgen^1, 3.^1Delft University of Technology, Netherlands; ^2Harvest Imaging, Bree, Belgium; ^3 MESA Imaging, Switzerland
12:20-13:50	Lunch
Session 07	Noise
	Session chair: Boyd Fowler (Farichild Imaging)
13:50-14:10	New Source of Random Telegraph Signal in CMOS Image Sensors
R27	V. Goiffon^1, P. Magnan^1, P. Martin-Gonthier^1, C. Virmontois^1, and M. Gaillardin^2. ^1ISAE, France; ^2CEA DAM-DIF, France
14:10-14:25	Analysis of Blinking Pixels in CCD Imagers with and without Surface Pinning
R28	Inge Peters, Erik Bogaart^*, Erik-Jan Manoury, Adri Mierop, Jan Bosiers. TELEDYNE DALSA Professional Imaging, the Netherlands; ^*ASML, the Netherlands
14:25-14:45	Dark Fixed Pattern Noise Generation by Negative-Bias-Temperature (NBT) Stress on CMOS Imager Pixel Transfer Gate
R29
	Hirofumi Yamashita, Motohiro Maeda, Shogo Furuya, Takanori Yagami. Toshiba Corporation, Japan
14:45-15:00	5MPix, 30fps CMOS Image Sensor with Very Low Temporal Line Noise
R30	G.G. Storm, M.D. Purcell, J. K Moore, M. Wigley, D. Tolmie, L.A Grant. STMicroelectronics, UK
15:00-15:15	4T CMOS Image Sensor Pixel Degradation due to X-ray Radiation
R31	Jiaming Tan^1, Bernhard Büttgen^1 and Albert J. P. Theuwissen^1,2. ^1Delft University of Technology, the Netherlands; ^2Harvest Imaging, Belgium
15:15-15:35	Break
Session 08	Stacked Structures, High Dynamic Range Sensors, and CCDs
	Session chair: Koichi Mizobuchi (Olympus Medical Systems)
15:35-15:50	Investigation of Two-Layer Photodetectors for YSNR10 Improvement in Submicron Pixels
R32
	Eric R. Fossum. Samsung Electronics Semiconductor R&D Center, South Korea and Thayer School of Engineering at Dartmouth, USA
15:50-16:05	A 128 x 96 Pixel Stack-Type Color Image Sensor with B-, G-, R-sensitive Organic Photoconductive Films
R33
	Hokuto Seo^1*, Satoshi Aihara^1, Toshihisa Watabe^1, Hiroshi Ohtake^1, Toshikatsu Sakai^1, Misao Kubota^1, Norifumi Egami^1, Takahiro Hiramatsu^2, Tokiyoshi Matsuda^2, Mamoru Furuta^2, and Takashi Hirao^2. ^1NHK, Japan; ^2Kochi University of Technology, Japan
16:05-16:25	Process Integration Aspects of Back Illuminated CMOS Imagers Using Smart StackingTM Technology with Best in Class Direct Bonding
R34
	Ruth Shima Edelstein^1, Omer Katz^1, Becky Lavi^1, Ishai Aberman^1, Sagee Rosenthal^1, Michal Shadmi^1, Shay Arad^1, Nili Golan^1, Michal Shach Caplan^1, Morad Massalha^1, Chrystelle Lagahe-Blanchard^2, Laurent Marinier^2, Richard Fontanière^2, Arnaud Castex^2, Marcel Broekaart^2, Muriel Martinez^2, Nathalie Milhet^2, Arnaud Rigny^2, Christine Pelissier^2. ^1TowerJazz, Israel; ^2SOITEC, France
16:25-16:40	A 768x576 Logarithmic Image Sensor with Photodiode in Solar Cell mode
R35	Yang Ni, YiMing Zhu, Bogdan Arion. New Imaging Technologies SA, France
16:40-16:55	An 89dB Dynamic Range CMOS Image Sensor with Dual Transfer Gate Pixel
R36	Xinyang Wang, Bram Wolfs, Guy Meynants, Jan Bogaerts. CMOSIS N.V, Belgium
16:55-17:15	A 1080 HD Ready 1/2.33-type 12M Pixel CCD Image Sensor with Dual Channel Horizontal CCD
R38
	Koichi Yonemura, Toshihumi Habara, Hirokazu Shiraki, Yoshiaki Sato, Akira Tsukamoto. Panasonic Corporation, Japan
17:15-17:30	break
Session 09	Invited Presentation-III
	Session chair: Shoji Kawahito (Shizuoka University)
17:30-18:00	The 25th Anniversary of IISW: Reflections on Directions
I3	Eric R. Fossum. Intl. Image Sensor Society, USA
Friday, June 10th 2011
Session 10	Invited Presentation and Avalanche Diode Sensors
	Session chair: Shigetoshi Sugawa (Tohoku University) Satoshi Aihara (NHK)
08:30-09:00	Invited Presentation-IV
I4	Single Photon Imaging
	Peter Seitz. CSEM, Switzerland and EPFL STI IMT NE, Switzerland
09:00-09:20	Single Photon Avalanche Diodes in 90nm CMOS Imaging Technology with sub-1Hz Median Dark Count Rate
R39
	Eric. A. G. Webster^1, Justin Richardson^1, Lindsay Grant^2, Robert K. Henderson^1. ^1The University of Edinburgh, UK; ^2STMicroelectronics, UK
09:20-09:40	A 32x32 SPAD Pixel Array with Nanosecond Gating and Analog Readout
R40	Lucio Pancheri, Nicola Massari, Fausto Borghetti and David Stoppa. Fondazione Bruno Kessler, Italy
09:40-10:00	A Time-Gated 128X128 CMOS Spad Array for On-Chip Fluorescence Detection
R41	Y. Maruyama and E. Charbon. Delft University of Technology, the Netherlands
10:00-10:15	3D Near-Infrared Imaging Based on a SPAD Image Sensor
R42	Juan Mata Pavia^1,2, Cristiano Niclass^1, Claudio Favi^1, Martin Wolf^2, Edoardo Charbon^1,3. ^1Ecole Polytechnique Fédérale de Lausanne, Switzerland; ^2University Hospital Zürich, Switzerland; ^3TU Delft, Netherlands
10:15-10:30	185 MHz Count Rate, 139 dB Dynamic Range Single-Photon Avalanche Diode with Active Quenching Circuit in 130 nm CMOS Technology
R43
	Andreas Eisele^1,2, Robert Henderson^3, Bernd Schmidtke^2, Tobias Funk^2, Lindsay Grant^4, Justin Richardson^3,5, Wolfgang Freude^1,6. ^1 IPQ, Karlsruhe Institute of Technology, Germany; ^2 Robert Bosch GmbH, Germany; ^3 The University of Edinburgh,UK; ^4STMicroelectronics Imaging Division, UK; ^5 Dialog Semiconductor Ltd., UK; ^6 IMT, Karlsruhe Institute of Technology, Germany
10:30-10:45	A Disdrometer Based on Ultra-Fast SPAD Cameras
R44	A. Berthoud^1, S. Burri^1, C. Bruschini^1, A. Berne^1, and E. Charbon^1,2. ^1EPFL, Switzerland; ^2Delft University of Technology, the Netherlands
10:45-11:05	Break
Session 11	Large Area Sensors and Xray Sensors
	Session chair: Bart Dierickx (Caeleste)
11:05-11:25	A 300mm Wafer-Size CMOS Image Sensor for Low-Light-Level Imaging
R45	Hidekazu Takahashi, Yuichiro Yamashita, Shin Kikuchi, Masato Fujita, Satoshi Hirayama, Taikan Kanou, Sakae Hashimoto, Kazuyuki Shigeta, Takashi Aoki, Genzo Momma, Shunsuke Inoue. Canon INC., Japan
11:25-11:40	A 23 x 25.9cm2 RGB color CMOS Imager System for Digital Photography
R46	Hein Loijens, Bart Dillen, Wasim Muhammad, Daniel Verbugt, Laurens Korthout, Peter te Vaarwerk, Auke van der Heide, Leon Ponjee, Kim Theuwissen, Piet Jansen, Frank Polderdijk, Jan Bosiers. DALSA Professional Imaging, the Netherlands
11:40-11:55	A 61mmx63mm, 16Million Pixels, 40 Frames per Second, Radiation-Hard CMOS Image Sensor for Transmission Electron Microscopy
R47
	N. Guerrini^1, R. Turchetta^1, G. Van Hoften^2, A. R. Faruqi^3, G. McMullan^3, R. Henderson^3. ^1Rutherford Appleton Laboratory, UK; ^2 FEI, the Netherlands; ^3 MRC Laboratory of Molecular Biology, UK
11:55-12:10	Color X-ray Photon Counting Image Sensing
R48	Bart Dierickx^1,2, Benoit Dupont^1,3, Arnaud Defernez^1, Nayera Ahmed^1. ^1Caeleste, Belgium; ^2V.U.B., Belgium; ^3Université Paris XIII, France
12:10-12:25	Single Grain TFTs and Lateral Photodiodes for Large Area X-ray Detection
R50	A. Arslan, R. Ishihara, C.I.M. Beenakker. Delft University of Technology, the Netherlands
12:25-14:00	Lunch
14:00-18:00	Social Event
18:00-20:00	Dinner/WKA/Best Poster Award
Saturday, June 11th 2011
Session 12	Global Shutter Sensors
	Session chair: Daniel Van Blerkom (Forza Silicon)
08:30-08:50	Backside Illuminated Global Shutter CMOS Image Sensors
R51	Guy Meynants, Jan Bogaerts, Xinyang Wang, Guido Vanhorebeek. CMOSIS nv., Belgium
08:50-09:10	A 1.2MP 1/3” Global Shutter CMOS Image Sensor with Pixel-Wise Automatic Gain Selection
R53
	Johannes Solhusvik^1, Sergey Velichko^2, Trygve Willassen^1, Sohrab Yaghmai^1, Jenny Olsson^1, Anders Rosnes^1, Tore Martinussen^1, Per Olaf Pahr^1, Siri Eikedal^1, Steve Shaw^3, Ranjit Bhamra^3, Dan Pates^2, Scott Smith^2, Lingtao Jiang^2, David Wing^2 , Jenny Bai^2, Satyadev Nagaraja^2, Ajaya Chilumula^2. ^1Aptina, Norway; ^2Aptina, USA; ^3Aptina, UK
09:10-09:25	A Low Noise Low Power Global Shutter CMOS Pixel Having Single Readout Capability And Good Shutter Efficiency.
R54
	Yannick De Wit, Tomas Geurts. ON Semiconductor, Belgium
09:25-9:40	Dark Current Characterization of CMOS Global Shutter Pixels using Pinned Storage Diodes
R55
	Keita Yasutomi, Yusuke Sadanaga, Taishi Takasawa, Shinya Itoh, Shoji Kawahito. Shizuoka University, Japan
9:40-9:55	A Common Gate Pinned Photodiode Pixel
R56	Yannick De Wit, Manuel Innocent. On Semiconductor, Belgium
9:55-10:15	Break
Session 13	High-Speed and ADC Techniques
	Session chair: Tetsuo Nomoto (Sony) Inge Peters (Dalsa)
10:15-10:30	Progress of Ultra-high-speed Image Sensors with In-situ CCD Storage
R57	T. G. Etoh^1, V. T. S. Dao^1, H. D. Nguyen^1, K. Fife^2, M. Kureta^3, M. Segawa^3, M. Arai^4 and T. Shinohara^4. ^1Kinki University, Japan;^2Ubixum Inc, USA; ^3JAEA, Japan; ^4J-PARC, Japan
10:30-10:45	Design of a PTC-Inspired Segmented ADC for High Speed Column Parallel CMOS Image Sensor
R58
	Steven Huang, Ramy Tantawy, Sinh Lam, Daniel Van Blerkom and Barmak Mansoorian. Forza Silicon Corporation, USA
10:45-11:00	A 26.2Mpixel, 74fps, Global Shutter CMOS Imager with 20Gb/s Interface for Multi Object Monitoring
R59
	Cedric Esquenet, John Compiet, Tim Blanchaert, Tomas Geurts, Joost Decupere. ON Semiconductor, Belgium
11:00-11:15	High Speed 36 Gbps 12Mpixel global pipelined shutter CMOS image sensor with CDS
R60
	Jan Bogaerts, Koen Ruythooren, Aleksandar Gvozdenovic, Kevin Van Esbroeck, Bart Ceulemans, Werner Ogiers, Gavril Arsinte, Xinyang Wang, Guy Meynants, CMOSIS nv, Belgium
11:15-11:30	A High-Speed Low-Noise CIS with 12b 2-stage Pipelined Cyclic ADCs
R61	Jong-Ho Park^1, Satoshi Aoyama^1, Takashi Watanabe^1, Tomohiko Kosugi^1, Zheng Liu^1, Tomoyuki Akahori^1, Masaaki Sasaki^1, Keigo Isobe^1, Yuichi Kaneko^1, Kazuki Muramatsu^1, Tetsuya Iida^1and Shoji Kawahito^1,2. ^1Brookman Technology, Inc., Japan; ^2Shizuoka University, Japan
11:30-11:50	A 33 Mpixel, 120 fps CMOS Image Sensor for UDTV Application with Two-stage Column-Parallel Cyclic ADCs
R62
	K. Kitamura^1, T. Watabe^1, Y. Sadanaga^2, T. Sawamoto^2, T. Kosugi^3, T. Akahori^3, T. Iida^3, K. Isobe^3, T. Watanabe^3,H. Shimamoto^1, H. Ohtake^1, S. Aoyama^3, S. Kawahito^2, and N. Egami^1. ^1NHK, Japan; ^2Shizuoka University, Japan; ^3Brookman Technology, Inc., Japan
11:50-12:10	A 17.7Mpixel 120fps CMOS Image Sensor with 34.8Gb/s Readout
R63	Takayuki Toyama^1, Koji Mishima^1, Hiroyuki Tsuchiya^1, Tatsuya Ichikawa^1, Hiroyuki Iwaki^1, Yuji Gendai^1, Hirotaka Murakami^1, Kenichi Takamiya^2, Hiroshi Shiroshita^1, Noriyuki Fukushima^1. ^1Sony, Japan; ^2Sony LSI Design, Japan
12:10-12:15	Closing Remarks