PROGRAM

2005 IEEE Workshop on Charge-Coupled Devices and

Advanced Image Sensors

Thursday, June 9

8:30-8:45 Opening Remarks N. Teranishi

Session 1. Small Pixel Sensors(1)

Chairman S.G. Wuu (TSMC)

8:45 Optimization of Cu Interconnect Layers for 2.7 µm Pixel Image Sensor Technology : Fabrication, Modeling, and Optical Results

J. Adkisson, J. Gambino, T. Hoague, M. Jaffe, J. Kyan*, R. Leidy*, D. McGrath*, R. Rassel, D. Sackett* and C. V. Stancampiano* IBM Corporation, USA *Eastman Kodak Company, USA

9:05 High-Efficiency Dielectric Structure for Advanced CMOS Imagers

T.H. Hsu, Y.K. Fang, S.G. Wuu*, H.C. Chien*, D.N. Yaung*, C.H. Tseng*, J.S. Lin*, L.L. Yao*, W.D. Wang*, C.Y. Yu*, C.H. Lo* and C.S. Wang*

National Cheng Kung University, Taiwan, R.O.C.

*Taiwan Semiconductor Manufacturing Company, Taiwan, R.O.C.

9:30 Shared Pixels for CMOS Image Sensor Arrays

R.D. McGrath, H. Fujita, R.M. Guidash, T.J.Kenney and W. Xu

Eastman Kodak Company, USA

9:50 2.8µm-Pixel Image Sensor .Maicovicon™

M. Murakami, M. Masuyama, S. Tanaka, M. Uchida, K. Fujiwara, M. Kojima, Y. Matsunaga and S. Mayumi

Matsushita Electric Industrial Co., Ltd., Japan

10:10-10:40 Coffee Break

Session 2. Noise (1); Circuit Noise

Chairman B. Pain (JPL)

10:40 Accurate Simulation and Modeling of Reset Noise in 3T CMOS Active Pixels

T. Lulé, R. Henderson*, L. Simony, F. Mütze, S. Benthien and M. Sommer

ST Microelectronics, France

*University of Edinburgh, UK

11:00 Analysis of Reset Noise Suppression via Stochastic Differential Equations

B. Fowler, M. D. Godfrey* and S. Mim

Fairchild Imaging, USA

*Stanford University, USA

11:20 Pixel-Pixel Fixed Pattern Noise in CMOS Image Sensors due to Readout Parasitic Capacitance

R.K. Henderson, J.E.D. Hurwitz*, L.A. Grant*, K.M. Findlater* and T. Lule**

University of Edinburgh, UK

*ST Microelectronics, UK

**ST Microelectronics, France

11:40 A Low-Noise Signal Readout Circuit Using Double-Stage Noise Cancelling Architecture for CMOS Image Sensors

N. Kawai and S. Kawahito

Shizuoka University, Japan revised paper after conference

12:00 CMOS-APS Sensor with TDI for High Resolution Planetary Remote Sensing

H. Michaelis, R. Jaumann, S. Mottola, J. Oberst, R. Kramm*, R. Roll*, H. Boehnhardt*, H. Michalik** and G. Neukum***

Deutsche Zentrum für Luft- und Raumfahrt (DLR), Germany

*Max-Planck-Institut für Sonnensystemforschung (MPS), Germany

**Institut für Datentechnik und Kommunikationsnetze (IDA), Germany

***Freie Universität Berlin (FUB), Germany

12:20-14:00 Lunch

Session 3. Scientific Sensors, High-Sensitivity Sensors

Chairman K. Tanioka (NHK)

14:00 A Back-illuminated Megapixel CMOS Image Sensor

B. Pain, T. Cunningham, S. Nikzad, M. Hoenk, T. Jones, B. Hancock and C. Wrigley

Jet Propulsion Laboratory, California Institute of Technology, USA

14:20 High-end CMOS Active Pixel Sensor for Hyperspectral Imaging

J. Bogaerts, B. Dierickx, P. De Moor*, D.S. Tezcan*, K. De Munck* and C. Van Hoof*

Cypress / FillFactory, Belgium

*IMEC, Belgium

14:40 CMOS Sensors for High Energy Physics

P.P. Allport*, G. Casse*, A. Evans*, L. Jones, R.Turchetta, M.Tyndel, J.J. Velthuis*, G. Villani and F. Zakopoulos

Rutherford Appleton Laboratory, UK

*University of Liverpool, UK

15:00 CMOS Image Sensor Overlaid with an Organic Photoconductive Film

T. Watabe, S. Aihara, N. Egami, M. Kubota, K. Tanioka, N. Kamata* and D. Terunuma*

NHK Science and Technical Research Laboratories, Japan

*Department of Functional Materials Science, Saitama University, Japan

15:20 Highly Sensitive Magnetic Focus FEA Image Sensor with HARP Target

Y. Hirano, M. Nanba, Y. Honda, K. Miyakawa, T. Watabe, S. Okazaki, N. Egami, Y. Obara*, M. Tanaka*, S. Itoh* and A. Kobayashi**

NHK Science & Technical Research Labs, Japan

*Futaba Co., Japan

**Hamamatsu Photonics K.K., Japan

15:40-16:10 Coffee Break

Session 4. Short Oral Presentations for Posters

Chairman K. Orihara (Matsushita), B. Dierickx (Cypress/FillFactory)

16:10 Mobile Imaging Sensor Assessment – a Customer’s Point of View

J. Alakarhu, E. Salmelin and J. Viinikanoja

Nokia, Finland

16:14 Estimates for Scaling of Pinned Photodiodes

A. Krymski and K. Feklistov*

Alexima, USA

*Inst. Semiconductor Physics, Russia

16:18 High Speed 3-D Wave Optical Simulation for Image Sensors

H. Mutoh

Link Research Corporation, Japan

16:22 The Effect of Switched Biasing on 1/f Noise in CMOS Imager Front-Ends

M.F. Snoeij, A.P. van der Wel*, A.J.P. Theuwissen and J.H. Huijsing

Delft University of Technology, The Netherlands

*University of Twente, The Netherlands

16:26 1/f Noise Measurement in CMOS Image Sensors

S. Mims, B. Fowler and B. Frymire*

Fairchild Imaging, USA

*Flextronics, USA

16:30 APS Column Fixed Pattern Noise Reduction

T. Anaxagoras, S. Triger, N.M. Allinson and R. Turchetta*

University of Sheffield, UK

*Rutherford Appleton Laboratory, CCLRC, UK

16:34 Simplified Fixed Pattern Noise Correction for Logarithmic Sensors

S.O. Otim, B. Choubey, D. Joseph and S. Collins

Department of Engineering Science, University of Oxford, UK

16:38 Influence of f-number on Colour Matrix Behaviour

R. L. Nicol, K. M. Findlater, E. Findlay, L.A. Grant, J.E.D. Hurwitz,

A.A. Murray and S.G. Smith

ST Microelectronics, UK

16:42 CMOS Pixels Crosstalk mapping and Modulation Transfer Function

M.Estribeau and P.Magnan

SUPAERO – CIMI Laboratory, France

16:46 Intra-pixel CMOS APS MTF

I. Shcherback, B. Likhterov, A. Belenky and O.Y. Pecht*

Ben-Gurion University, Israel

*University of Calgary, Canada

16:50 Fabrication of Avalanche Multiplication Type a-Si:H Photodiode Films with Low Operation Voltage

M. Akiyama, K. Futatsuki, T. Miyazawa, J.Yamauchi and K Sawada*

Nagano National College of Technology, Japan

*Toyohashi University of Technology, Japan

16:54 Super High-Sensitivity HARP Target

T. Matsubara, Y. Ohkawa, K. Miyakawa, S. Suzuki, T. Takahata, M. Kubota, K. Tanioka, K. Ogusu*, A. Kobayashi*, T. Hirai* and T. Kawai*

NHK Science and Technical Research Laboratories, Japan

*Hamamatsu Photonics K.K., Japan

16:58 Fabrication and Initial Results for a Back-illuminated Monolithic APS in a Mixed SOI/Bulk CMOS Technology

B. Pain

Jet Propulsion Laboratory, California Institute of Technology, USA

17:02 SOI CMOS Image Sensor with Pinned Photodiode on Handle Wafer

Y.S. Cho, H. Takao*, K. Sawada*, M. Ishida* and S.Y. Choi

Kyungpook National University, Korea

*Toyohashi University of Technology, Japan

17:06 Design of a 148,680-pixel Ultrahigh-speed, High-sensitivity CCD

H.Ohtake, T.Hayashida, K.Kitamura, T.Arai, J.Yonai, H.Maruyama, K.Tanioka, T.G. Etoh*, D. Poggemann**, A. Ruckelshausen**, H. van Kuijk*** and Jan T. Bosiers***

NHK Science & Technical Research Laboratories, Japan

*Kinki University, Japan

**Fachhochschule Osnabruck, Germany

***DALSA Inc., The Netherlands

17:10 Design of the PC-ISIS: Photon-Counting In-situ Storage Image Sensor

T.G. Etoh , N. Ohtsuka, T. Arai*, H. Mutoh**, D. Poggemann*** and A. Ruckelshausen***

Graduate School of Science and Engineering, Kinki University, Japan

*NHK Science and Technical Research Laboratories, Japan

**Link Research Corporation, Japan

***Fachhochschule Osnaburueck, Germany

17:14 Stitched mk x 96 7µm Pixel TDI Sensor

L. Wu, N. O, C. Draijer*, J. Bosiers*, H. van Kuijk* and H. Stoldt*

DALSA Corporation, Canada

*DALSA Corporation, The Netherlands

17:18 Instantaneous Automatic Light Control for CMOS Imagers

A. Olsen, J. Moholt, E. Olsen, S. Iversen, G. Mikes and M. Hartmann

Micron Europe Ltd., Norway

17:22 Analog and 15-b digital Output Image Sensor for Wide Dynamic Range

T. Ogi, F. Suzuki, K. Fujita and T. Hamamoto

Tokyo University of Science, Japan

17:26 Pulse Modulation Image Sensors for in vitro and in vivo on-chip Brain Imaging

T. Tokuda, D.C. Ng, A. Yamamoto, K. Tanaka, M. Matsuo, K. Kagawa, M. Nunoshita and J. Ohta

Nara Institute of Science and Technology, Japan

17:30 Vision Chip Architecture for Saccade Tracking

J. Akita, H. Takagi, T. Nagasaki*, M. Toda*, T. Kawashima* and A. Kitagawa

Kanazawa University, Japan

*Future University-Hakodate, Japan

HVS Low Perception of FPN Noise in Pyramidal CMOS Imager

F. Saffih and R. Hornsey*

University of Waterloo, Canada

*York University, Canada

17:34-18:00 Break

18:00-21:00

Session 5. Poster Viewing and Reception

Friday, June 10

Session 6. Noise (2); Process Related Noise

Chairman E. Roks (DALSA)

8:30 Dark Current Reduction in FF-CCDs

I.M. Peters, A. Kleimann, W. Klaassens, F. Polderdijk and J.T. Bosiers

DALSA Professional Imaging, The Netherlands

8:50 Excess Noise and Dark Current Mechanisms in CMOS Imagers

B. Pain, T. Cunningham, B. Hancock, C. Wrigley and C. Sun

Jet Propulsion Laboratory, California Institute of Technology, USA

9:10 Characterization and Improvement of Random Noise in 1/3.2” UXGA CMOS Image Sensor with 2.8um Pixel using 0.13um-Technology

J.Y. Kim, S.I. Hwang, J.J. Lee, J.H. Ko, Y. Kim, J.C. Ahn, T. Asaba and Y.H. Lee

Samsung Electronics Co., Korea

9:35 The Tolerance for FD Dark Current and PD Overflow Current Characteristics of Wide Dynamic Range CMOS Image Sensor Using a Lateral Overflow Integration Capacitor

S. Adachi, S. Sugawa*, N. Akahane*, K. Mori, T. Ishiuchi and K. Mizobuchi

Texas Instruments Japan, Japan

*Graduate School of Engineering, Tohoku University, Japan

9:55-10:25 Coffee Break

Session 7. Silicon Retina, Computational Sensors, ADC

Chairman A. Theuwissen (DALSA)

10:25 64x64 Event-Driven Logarithmic Temporal Derivative Silicon Retina

P. Lichtsteiner and T. Delbruck

ETH / UNI Zurich, Switzerland

10:45 Ultra High Light Shutter Rejection Ratio Snapshot Pixel Image Sensor ASIC for Pattern Recognition

G. Yang and T. Dosluoglu

Dialog Semiconductor Inc., USA

11:05 A CMOS Image Sensor for ID Detection with High-speed Readout of Multiple Region-of-interests

K. Yamamoto, Y. Maeda*, Y. Masaki**, K. Kagawa, M. Nunoshita and J. Ohta

Nara Institute of Science and Technology, Japan

*Japan Science and Technology Agency (JST), Japan

**FUNAI Electric Co., Ltd., Japan

11:25 A Low-Power Column-Parallel 12-bit ADC for CMOS Imagers

M.F. Snoeij, A.J.P. Theuwissen and J.H. Huijsing

Delft University of Technology, The Netherlands

11:45 12-Bit Column-Parallel ADC with Accelerated Ramp

T. Otaka, Y. Lee*, T. Bales*, P. Smith**, J. MacDowell**, S. Smith** and I. Takayanagi

Japan Imaging Design Center, Micron Japan, Ltd., Japan

*UK Imaging Design Center, Micron Europe, Ltd., UK

**Micron Technology, Inc., USA

12:05-13:30 Lunch

Session 8. HDTV, High-Speed Sensors, Range Imaging

Chairman J. Hurwitz (ST Microelectronics)

13:30 Development of 2/3-type 1-Mega Pixel Progressive Scan CCD for HDTV Capable of High Frame Rate of 96fps

T. Honda, H.i Yamamoto, H. Okamoto and R. Nagayoshi

Matsushita Electric Industrial Co., Ltd., Japan

13:50 Scalable Architecture for High-Resolution Video-Rate CMOS Imaging System on Chip

A. Joshi, D. Chiaverini, K. Jung, V. Douence, G. Wijeratne, G. M. Williams and M. Loose

Rockwell Scientific, USA.

14:10 A 4M Pixel CMOS Image Sensor for High Speed Image Capture

P. Donegan, E. Fox, B. Li, M. Sonder, F. Feng, M. Kiik and S. Xie

DALSA Corporation, Canada

14:30 12k 5µm Linescan CCD Sensor with 320 MHz Data Rate

B. Benwell, N. O, G. Allan, J. Huras and M. Ledgerwood

DALSA Corporation, Canada

14:50 Smart Pixels for Future 3D-TOF Sensors

M. Lehmann, T. Oggier, B. Büttgen, Chr. Gimkiewicz, M. Schweizer, R. Kaufmann, F. Lustenberger and N. Blanc

CSEM, Switzerland

15:10-15:45 Coffee Break

Session 9. Small Pixel Sensors(2)

Chairman D. McGrath (Kodak)

15:45 The Design and Characterization of CMOS Image Sensor with Active Pixel Array of 2.0µm Pitch and Beyond

H. Noh, K. Lee, D. Lee and K. Kim

Samsung Electronics Co., Ltd., Korea

16:05 On theEffective Optical Fill Factor of Fine Pitch Metals

A. Martensson*, B. Dierickx and G. Meynants

Cypress / FillFactory, Belgium

*Lund Institute of Technology, Lund University, Sweden

16:25 Optical-Electrical Characteristics of Small, Sub-4µm and Sub-3µm Pixels for Modern CMOS Image Sensors

G. Agranov, T. Gilton, R. Mauritzson, U. Boettiger, P. Altice, J. Shah, J. Ladd, X. Fan, F. Brady, J. McKee, C. Hong, X. Li and I. Patrick

Micron Technology, Inc., USA

16:45 A 2.20-um Square Pixel IT-CCD Constructed from Single-Layer Electrode

N. Karasawa, D. Sugimoto, H. Ohki, K. Hatano* and H. Yoshida**

Sony Corporation, Japan

*Sony Semiconductor Kyusyu Corporation, Japan

**Sony LSI Design Inc., Japan

17:05-17:40 Break

Session 10. Discussion Session

Chairman J. Hynecek (iSETEX), J. Nakamura (Micron Japan)

17:40 What To Do With Sub-Diffraction-Limit (SDL) Pixels? -- A Proposal for a Gigapixel Digital Film Sensor (DFS)

E.R. Fossum

Siimpel Corporation, USA

University of Southern California, USA

18:50 Panel discussion, Open discussion

18:50-19:00 Break

19:00-21:00

Session 11. Walter Kosonocky Award Presentation, Dinner

Chairman N. Teranishi (Matsushita)

Saturday, June 11

Session 12. WDR, Automotive, Range-Imaging, Image Compression

Chairman N. Blanc (CSEM)

8:30 A Wide Dynamic Range CMOS Image Sensor with Multiple Exposure Time Signals and Column-Parallel Cyclic A/D Converters

M. Sasaki, M. Mase*, S. Kawahito* and Y. Wakamori**

Sendai National College of Technology, Japan

*Research Institute of Electronics, Shizuoka University, Japan

**Yamaha Corporation, Japan

8:50 A Wide-VGA CMOS Image Sensor with Global Shutter and Extended Dynamic Range

N. Bock, A. Krymski, A. Sarwari, M. Sutanu, N. Tu, K. Hunt, M. Cleary, N. Khaliullin and M. Brading

Micron Imaging, Micron Technology, Inc., USA

9:10 A Low-Voltage Pulse-Width-Modulation Image Sensor

M. Shouho, K. Hashiguchi, K. Kagawa* and J. Ohta*

Sharp Corp., Japan

*Nara Institute of Science and Technology, Japan

9:30 A 50x30-pixel CMOS Sensor for TOF-based Real Time 3D Imaging

D. Stoppa, L. Viarani, A. Simoni, L. Gonzo, M. Malfatti and G. Pedretti

Istituto per la Ricerca Scientifica e Tecnologica (ITC-irst), Italy

9:50 A Compact Snap-Shot Range-Imaging Receiver

B. Pain, L. Matthies, B. Hancock and C. Sun

Jet Propulsion Laboratory, California Institute of Technology, USA

10:10 Image Compression Sensor Using Inter-Frame and Intra-Frame Correlation

K. Imai, H. Taruki, T. Hamamoto and H. Ohtake*

Tokyo University of Science, Japan

*NHK Science & Technical Research Laboratories, Japan

10:30-11:00 Coffee Break

Session 13. Large Format Sensors

Chairman E. Fossum (Siimpel)

11:00 A Historical Perspective, Design, Fabrication, and Performance of the CASSINI Huygen's Probe DISR CCD Imager

R.A Bredthauer, H.U. Keller* and J.R. Kramm*

Semiconductor Technology Associates, Inc., USA

*Max-Planck-Institut fiir Sonnensystemforschung (MPS), Germany

11:20 A 9 Megapixel APS-size CMOS Image Sensor for Digital Still Photography

G. Meynants, B. Dupont, N. Witvrouwen, B. Wolfs, G. Schippers, K. Maher, B. Dierickx, B. Lee, D. Arnzen and S. Lee

Cypress / FillFactory, Belgium

11:40 8.3 Mp, 4/3" Full-Frame CCD with Scaled LOD and Micro Optics

E.G. Stevens, E.K. Banghart, H.Q. Doan, E.J. Meisenzahl, H. Murata*, D.N. Nichols and J.P. Shepherd

Eastman Kodak Company, USA

*Kodak Japan Ltd., Japan

12:00 Third Generation Large Area Professional DSC CCD Process and Design Technology

C. Draijer, W. Klaassens, H.L. Peek, H. Stoldt, B.G.M. Dillen and J.T. Bosiers

DALSA Professional Imaging (DPI), The Netherlands

12:20-12:30 Closing Remarks