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Call for Papers for a Special Issue of
IEEE Transactions on Electron Devices
On
Solid-State Image Sensors
In
recent years there have been significant advances in solid-state image sensors
including charge-coupled device (CCD) image sensors and CMOS-based image
sensors (CIS). Improvements in pixel
density, quantum efficiency, power dissipation, temporal noise, fixed-pattern
noise are just some of the advancements that are permitting the widespread
adoption of image acquisition in consumer appliances such as personal digital
assistants, digital still cameras, camcorders, cell phone handsets as well as
in automotive, industrial and scientific applications. This special issue will provide a focal point
for reporting these advancements in an archival journal and serve as an
educational tool for the solid-state image sensor community. Previous special issues on solid-state image
sensors were published in 1976, 1985, 1991, 1997 and 2003.
Areas
of interest include, but are not limited to:
1.
Pixel device physics (New devices and structures,
Advanced materials, Improved models and scaling, Advanced pixel circuits,
Performance enhancement for QE, Dark current, Noise, etc.)
2.
Image sensor design and performance (New architectures,
Small pixels and Large format arrays, High dynamic range, Low voltage, Low
power, High frame rate readout, Scientific-grade)
3.
Image-sensor-specific peripheral circuits (ADCs and
readout electronics, Color and image processing, Smart sensors and
computational sensors, System on a chip)
4.
Non-visible “image” sensors (Enhanced spectral
response e.g., UV, NIR, High energy
photon and particle detectors e.g., X-rays, Ions, Hybrid detectors)
5.
Fabrication, packaging and manufacturing
6. Miscellaneous topics related
to image sensor technology
In
preparing the manuscript, please follow the guidelines for authors in the inside back cover of the IEEE
Transactions on Electron Devices journal.
Please indicate that the manuscript is for this Special Issue. The manuscripts should be submitted in PDF
format and sent to:
Ms. Jo Ann Marsh
IEEE/EDS Publications Office
Email: j.marsh@ieee.org
Guest Editor-in-Chief: Dr. Eric R.
Fossum, ImageSensors, Inc., Pasadena, CA, USA
Associate Guest Editors: Dr.
Jerry Hynecek, ISETEX, Allen, Texas, USA
Prof. Pierre Magnan, ISAE,
Toulouse, France
Dr. Junichi Nakamura, Aptina,
Japan
Mr. Nobukazu Teranishi, Matsushita, Kyoto, Japan
Prof. Albert Theuwissen, Delft Univ. of Tech., Netherlands
Dr. John Tower, Sarnoff Corporation, Princeton, NJ, USA
(The following material is
from the Special Issue proposal to IEEE TED)
Background and Objectives:
Solid-state
image sensors are experiencing rapid developmental growth due to their
importance in camera phones (hundred of millions per year), digital still
cameras, camcorders, webcams, automotive cameras, and medical cameras, and
represents a multi-billion dollar segment of the semiconductor industry. While charge-coupled devices (CCDs)
dominated the market until early this millennium, CMOS image sensors have
quickly overtaken their market share due to their low power and integration
advantages in camera-phone applications.
Today,
both CCDs and CMOS image sensors face some difficult challenges for continued
advancement. Pixel sizes have shrunk to
the 1.4 micron range and further shrinkage while maintaining image quality is a
large challenge. Quantum efficiency, microoptics, charge handling capacity, and readout noise
are all “hitting the wall” at about the same time.
The
IEEE Transactions on Electron Devices has been the primary publication
for reporting advancements in solid-state image sensors, including Special
Issues in 1976, 1985, 1991, 1997 and 2003.
This mostly six-year cycle, while somewhat of an accident, is actually
appropriate for the rate of advancement and another Special Issue is proposed
for circa Nov 2009 publication. When the
last special issue of 2003 is reviewed, it is clear that the technology has advanced
dramatically since then and another special issue is indicated.
It
should also be noted that the IEEE Electron Device Society has sponsored the
IEEE Workshop on CCDs and Advanced Image Sensors since its initial meeting in
1986. While the bi-annual workshop is
now organized by ImageSensors, Inc., a California
non-profit public benefit company, it still retains close ties to the IEEE and
the IEEE EDS was a co-sponsor of the 2007 International Image Sensors Workshop
(its new name) held in Ogunquit Maine in June 2007. The attendance, limited at 150 persons and
targeted to senior image sensor technologists, “sold out” in 2 days after
registration opened, a new record. Over
85 papers were presented by the international attendees, also a record. (see www.imagesensors.org)
The
meeting encourages presentation of the latest image sensor results and there is
no peer review of the presented papers.
There is a need for peer-reviewed archival-quality publication of many
of these presentations.
Additional
related conferences for the image sensor community include the IEEE Electron
Devices Meeting (IEDM) where a few papers on image sensors are presented each year, and the ISSCC where additional papers are presented
each year. Also, the SPIE usually has a
conference on image acquisition nearly every year but paper quality in this
meeting is usually well below the standards of the aforementioned meetings and
the papers are not typically peer-reviewed.
So, why a special issue? Like with
all special issues, the consolidated reporting of advancements in a single
archival publication is the overall need addressed by the proposal. Having the papers together provides
educational benefits for the image sensor community in an easy-to-access
comparative source for a snapshot of solid-state image sensor technology in
2009. The papers in the previous Special
Issues are generally well cited. In
addition, there was widespread interest in a Special Issue of IEEE TED to
service the image sensor community voiced at the 2007 International Image
Sensor Workshop.
Guest Editors
(in alphabetical order)
Dr. Eric R. Fossum. Eric R. Fossum will serve as
Guest Editor-in-chief and be the point of contact for
authors and associate guest editors and will have overall responsibility for
the special issue. With over twenty five
years experience in solid-state image sensors, including university faculty
research, government laboratory experience, and small business start-up
experience, Dr. Fossum brings a 360o perspective to the special
issue. (see www.ericfossum.com) In addition to
delegating the paper review process to the associate editors, Dr. Fossum will
also arrange the review of some of the papers directly. Dr. Fossum was guest editor of the 1997 and
the 2003 special issues. He has
published over 240 technical papers and holds over 100
Dr. Jaroslav Hynecek, Jaroslav (Jerry) Hynecek
(M’73–SM’00) was born in Czechoslovakia on November 26, 1940. He received the
Dipl. Ing. degree in
electrical engineering from Czech Technical University (CTU), Prague, in 1962.
In 1969, he immigrated to the United States and received the Ph.D degree in electrical engineering from Case Western
Reserve University (CWRU), Cleveland, OH, in 1974. From 1962 to 1969, he worked
at the A. S. Popov Research Institute, Prague, and as an Assistant Professor of
physics at CTU, Podebrady. From 1974 to 1976 he
worked at CWRU. In 1976, he joined Texas Instruments, Inc. Dallas and achieved
the position of TI Fellow in 1990. In 1998, he founded a consulting
corporation, ISETEX, Inc., Allen, TX, where he is CTO. He has published 51
papers and is author or co-author of 82 issued U.S patents. Dr. Hynecek received the Paul Rappaport
award for the best paper published in any IEEE Electron Devices Society journal
during 1983, 2003 Walter Kosonocky award, and three
NASA Group Achievement Awards. In 1978 he invented Virtual Phase CCD Technology
that became the basis for the Pinned Photodiode concept and reduction of dark
current by accumulation of holes at the Silicon-Silicon dioxide interface. In
1993 he invented “Impactron” a charge multiplying CCD
image sensor that is the solid state equivalent of vacuum tube Image
Intensifiers. He has also participated in numerous image sensor related
conferences and workshops as a member of the paper selection committees or as a
session chairman or cochairman. Dr. Hynecek served as
Assoc. editor for IEEE TRANSACTIONS ON ELECTRON DEVICES from 1997 until
2006.
Prof. Pierre Magnan.
Pierre Magnan (M'99) was born in Nevers, France, in 1958. He received the MS and the Diplôme d'Etudes Approfondies (D.E.A.) degrees in integrated circuit design
from the University of Paris 11, France in 1982 and the Agregation
degree in electrical engineering degree from the Ecole
Normale Superieure de Cachan. From 1984 to 1993, he has been involved in CMOS
analog and semi-custom design at LAAS CNRS Laboratory, Toulouse, France. In 1995, he joined the CMOS Imagers Research
Group at SUPAERO in Toulouse, France , where he was
involved in active-pixels sensors research and development activities. In 2002,
he got his Accreditation for PhD Supervision and became Professor at SUPAERO,
now called ISAE, where he is now Head of CMOS Imagers Research Group.
He has been supervising 7 Ph.D candidates in the
field of image sensors and has authored
or co-authored 28 papers and a patent. He has been a member of the program committee of the IEEE
International Image Sensor Workshop 2007.
Dr. Junichi Nakamura. Junichi Nakamura received his B.S. and M.S.
in electronics engineering from Tokyo Institute of Technology,
Mr. Nobukazu Teranishi, Nobukazu Teranishi was born in 1953. He received the B.S. and M.S.
degrees in physics from University of Tokyo, 1976 and 1978, respectively.
He has developed image sensors and cameras at NEC
Corporation from 1978 to 2000 and at Matsushita Electric Industrial Co., Ltd.
from 2000 to present. He is a general manager at Image Sensor Business Unit,
Semiconductor Company. He has authored
and co-authored 78 papers and has submitted 95 patents. He won the Prize of the
President of KEIDANREN of National Invention Awards in 1994, Commendation by
Minister of State for Science and Technology in 1997, and Niwa-Takayanagi Award
from the Institute of Image Information and Television Engineers in 2000, by
his contributions to image sensor technology development including the pinned
photodiode invention. His group won the Technology Progress Award in 1986 from
the Institute of Television Engineers of Japan, the Technology Award in 1986
from the Motion Picture and Television Society of Japan, the Emmy Award in 1991
by the broadcast-use CCD camera development. His group also won the Fujio Award
in 1993 from the Institute of Television Engineers of Japan by the HDTV CCD
image sensor technology development. He
is a fellow of the Institute of Image Information and Television Engineers,
where he served as a chairman of the paper editor committee and a chairman of
the Information Sensing Committee. He is also a senior member of IEEE, where he
served as a guest editor of IEEE Transactions on Electron Devices for s special
issue on solid-state image sensors in 1997 and 2003. He also served as a
general chairman for the 1999 and 2005 IEEE Workshop on Charge-Coupled Devices
& Advanced Image Sensors. He is a member of the steering committee of the
aforementioned workshop and the Walter Kosonocky Award. He was a sub-program
committee member of the IEEE International Electron Devices Meeting in 1994,
1995, 2002, and 2003. He is a program committee member of the Electronic
Imaging Conference.
Prof. Albert
Theuwissen, Albert J. P. Theuwissen (SM’95–F’02) was born in
Dr. John Tower,
Reviewers:
In
the addition to the seven proposed editors listed above, the editors have a
long list of potential reviewers to draw upon.
This includes the 20 members of the Technical Program Committee for the
2007 International Image Sensor Workshop, as well as many of the 150
attendees. We do not expect that finding
appropriate reviewers will be a problem.
Prospective Authors and
Selection of Papers:
We
expect that this special issue will be attractive to authors from university,
government, and industry laboratories.
It is expected, as described below, to wind up with about 35
papers. Between the Workshop (85
papers), IEDM, ISSCC and perhaps SPIE meetings, we feel it should be easy to
solicit and select this number of high quality archival papers. We will also invite papers that will lead the
issue with review papers on CCDs and CMOS image sensors.
Expected number of
manuscripts and page count targets:
From
the 2003 Special Issue there were 34 papers in 262 pages (plus 3 for intro), or
about 7.7 pages per paper. Our target for
2009 is 35 papers and 280 pages (plus 3 for intro). We would also expect a certain number of
color pages due to the need to reproduce images from color image sensors.
Proposed Schedule:
Milestone Date Time from
publication
Call
for papers published June 2008 17 months
Submission
Deadline Dec 2008 11 months
Initial
reviews completed Feb
2009 9 months
Revised
papers submitted April
2009 7 months
Final
reviews completed May
2009 6 months
Final
papers submitted June
2009 5 months
Publication Nov
2009